MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19090L/D
MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and
MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
MRF5S19090LR3
RF Power Field Effect Transistors
MRF5S19090LSR3
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
•
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 25.8%
ACPR — - 51 dB
IM3 — - 37 dBc
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Integrated ESD Protection
•
Designed for Maximum Gain and Insertion Phase Flatness
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,
90 Watts CW Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
261
1.49
- 65 to +200
200
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
1990 MHz, 18 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
CASE 465- 06, STYLE 1
NI - 780
MRF5S19090LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19090LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 18 W CW
Symbol
R
θJC
Value (1,2)
0.67
0.75
Unit
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
MRF5S19090LR3 MRF5S19090LSR3
1
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
µAdc
µAdc
Symbol
Min
Typ
Max
Unit
Freescale
ARCHIVE
Semiconductor, Inc.
INFORMATION
ON CHARACTERISTICS (DC)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
µAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 850 mAdc)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
1.7
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.5
—
—
—
2.7
3.7
0.26
5
3.5
—
—
—
Vdc
Vdc
Vdc
S
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR
measured in 30 kHz Bandwidth and IM3 measured in 1.2288 MHz Bandwidth. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.
Common - Source Amplifier Power Gain
(V
DD
= 28 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured
over 1.2288 MHz bandwidth at f1 - 2.5 MHz and f2 = +2.5 MHz)
Adjacent Channel Power Ratio
(V
DD
= 28 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR
measured over 30 kHz bandwidth at f1 - 885 kHz and f2 +885 kHz)
Input Return Loss
(V
DD
= 28 Vdc, P
out
= 18 W Avg., I
DQ
= 850 mA, f1 = 1930 MHz,
f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)
(1) Part is internally matched both on input and output.
G
ps
13.5
14.5
—
dB
η
24
25.8
—
%
IM3
—
- 37
- 35
dBc
ACPR
—
- 51
- 48
dBc
IRL
—
- 14.5
-9
dB
MRF5S19090LR3 MRF5S19090LSR3
For More Information On This Product,
2
MOTOROLA RF DEVICE DATA
Go to: www.freescale.com
ARCHIVE INFORMATION
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
µAdc
Freescale Semiconductor, Inc.
B1
V
GG
R1
R2
+
C3
C4
C5
R3
C7
W1
+
C8
+
C13
R4
C11
C12
+
C9
V
DD
+
C10
C6
Z9
Z6
RF
INPUT
Z1
Z2
C15
Z3
C14
C1
Z4
Z5
Z7
DUT
Z8
Z10
Z11
Z12
C2
Z13
RF
OUTPUT
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
Z1
Z2
Z3
Z4
Z5
Z6
Z7
0.140″
0.450″
0.140″
0.525″
0.636″
0.340″
0.320″
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.080″ Microstrip
x 0.141″ Microstrip
x 0.050″ Microstrip
x 1.401″ Microstrip
Z8
Z9
Z10
Z11
Z12
Z13
PCB
0.091″ x 1.133″ Microstrip
0.542″ x 0.071″ Microstrip
0.450″ x 1.133″ Microstrip
0.640″ x 0.141″ Microstrip
0.316″ x 0.080″ Microstrip
1.209″ x 0.080″ Microstrip
Arlon GX - 0300 - 55 - 22, 30 mil,
ε
r
= 2.55
Figure 1. MRF5S19090 Test Circuit Schematic
Table 1. MRF5S19090 Test Circuit Component Designations and Values
Part
B1
C1
C2
C3, C13
C4, C12
C5, C11
C6, C7
C8
C9, C10
C14
C15
R1
R2
R3, R4
W1
Short RF Bead
22 pF Chip Capacitor, B Case
10 pF Chip Capacitor, B Case
1
µF,
50 V SMT Tantalum Capacitors
0.1
µF
Chip Capacitors, B Case
1k pF Chip Capacitors, B Case
4.3 pF Chip Capacitors, B Case
10
µF,
35 V SMT Tantalum Capacitor
22
µF,
35 V SMT Tantalum Capacitors
2.7 pF Chip Capacitor, B Case
0.6 – 4.5 Gigatrim Variable Capacitor
1 kW Chip Resistor
560 kW Chip Resistor
12
W
Chip Resistors
1 turn 14 gauge wire
Description
Value, P/N or DWG
95F786
100B220CP 500X
100B100CP 500X
T494C105(1)050AS
CDR33BX104AKWS
100B102JP 500X
100B4R3JP 500X
T494D106(1)035AS
T494X226(1)035AS
100B2.7BP 500X
44F3358
D5534M07B1K00R
CR1206 564JT
RM73B2B120JT
Manufacturer
Newark
ATC
ATC
Kemet
Kemet
ATC
ATC
Kemet
Kemet
ATC
Newark
Newark
Newark
Garrett Electronics
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
3
For More Information On This Product,
Go to: www.freescale.com
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
C8
C7
VGG
R1
B1
R2 C3 C4C5
CUT OUT AREA
R3
C6
W1
C11
C12
R4
C13
VDD
C9
C2
C10
C1
C14
C15
Freescale
ARCHIVE
Semiconductor, Inc.
INFORMATION
MRF5S19090
Rev 02
Figure 2. MRF5S19090 Test Circuit Component Layout
MRF5S19090LR3 MRF5S19090LSR3
For More Information On This Product,
4
MOTOROLA RF DEVICE DATA
Go to: www.freescale.com
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η
, DRAIN
EFFICIENCY (%)
16
G
ps
14
G ps , POWER GAIN (dB)
η
V
DD
= 28 Vdc, P
out
= 18 W (Avg.), I
DQ
= 850 mA
2−Carrier N−CDMA, 2.5 MHz Carrier Spacing
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability (CCDF)
30
40
12
IRL
IM3
8
ACPR
20
IM3 (dBc), ACPR (dBc)
0
−10
−20
−30
−40
−50
10
−20
−40
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
17
I
DQ
= 1300 mA
G ps , POWER GAIN (dB)
16
1100 mA
850 mA
650 mA
14
450 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
IM3, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−15
−20
−25
−30
−35
−40
−45
−50
−55
1
10
P
out
, OUTPUT POWER (WATTS) PEP
100
650 mA
I
DQ
= 450 mA
1100 mA
1300 mA
850 mA
V
DD
= 28 Vdc
f1 = 1958.75 MHz, f2 = 1961.25 MHz
Two−Tone Measurement, 2.5 MHz Tone Spacing
15
13
12
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
−25
Pout , OUTPUT POWER (dBm)
−30
3rd Order
−35
−40
−45
7th Order
−50
−55
0.1
V
DD
= 28 Vdc, P
out
= 90 W (PEP), I
DQ
= 850 mA
Two−Tone Measurements, Center Frequency = 1960 MHz
1
TWO−TONE SPACING (MHz)
10
56
55
54
53
52
51
50
49
48
47
46
45
31
32
33
34
35
36
37
38
39
40
41
42
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 850 mA
Pulsed CW, 8
µsec(on),
1 msec(off)
Center Frequency = 1960 MHz
Actual
P1dB = 50.82 dBm (120.78 W)
P3dB = 51.21 dBm (132.13 W)
Ideal
5th Order
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
5
For More Information On This Product,
Go to: www.freescale.com
ARCHIVE INFORMATION
6
−60
1860 1880 1900 1920 1940 1960 1980 2000 2020 2040 2060 2080
IRL, INPUT RETURN LOSS (dB)
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