ZXTP2012Z
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89
SUMMARY
BV
CEO
= -60V : R
SAT
= 32m ; I
C
= -4.3A
DESCRIPTION
Packaged in the SOT89 outline this new low saturation 60V PNP transistor
offers low on state losses making it ideal for use in DC-DC circuits, line
switching and various driving and power management functions.
FEATURES
•
Extremely low equivalent on-resistance;
R
SAT
= 32mV at 5A
•
4.3 amps continuous current
•
Up to 15 amps peak current
•
Very low saturation voltages
•
Excellent gain characteristics specified up to 10 amps
SOT89
APPLICATIONS
•
Emergency lighting circuits
•
Motor driving (including DC fans)
•
Solenoid, relay and actuator drivers
•
DC-DC modules
•
Backlight inverters
•
Power switches
•
MOSFET gate drivers
PINOUT
ORDERING INFORMATION
DEVICE
ZXTP2012ZTA
REEL
SIZE
7”
TAPE
WIDTH
12mm
embossed
QUANTITY PER
REEL
1,000 units
DEVICE MARKING
951
TOP VIEW
ISSUE 1 - JUNE 2005
1
SEMICONDUCTORS
ZXTP2012Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation at T
A
=25°C
Linear derating factor
(a)
(a)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
C
I
CM
P
D
P
D
T
j
, T
stg
LIMIT
-100
-60
-7
-4.3
-15
1.5
12
2.1
16.8
-55 to +150
UNIT
V
V
V
A
A
W
mW/°C
W
mW/°C
°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Operating and storage temperature range
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
83
60
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
2
ZXTP2012Z
CHARACTERISTICS
ISSUE 1 - JUNE 2005
3
SEMICONDUCTORS
ZXTP2012Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated)
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
SYMBOL
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
I
EBO
V
CE(SAT)
1k
1
-14
-50
-75
-160
Base-emitter saturation voltage
Base-emitter turn-on voltage
Static forward current transfer ratio
V
BE(SAT)
V
BE(ON)
H
FE
100
100
45
10
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
ON
t
OFF
-950
-840
250
200
90
25
120
48
39
370
300
MIN.
-100
-100
-60
-7
TYP.
-120
-120
-80
-8.1
1
1
-20
-0.5
-20
-0.5
-10
-20
-65
-110
-215
-1050
-950
MAX. UNIT CONDITIONS
V
V
V
V
nA
A
nA
A
nA
mV
mV
mV
mV
mV
mV
I
C
=-100 A
I
C
=-1 A, RB 1k
I
C
=-10mA*
I
E
=-100 A
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
V
CB
=-80V
V
CB
=-80V,T
amb
=100 C
V
EB
=-6V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-2A, I
B
=-200mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, I
B
=-500mA*
I
C
=-5A, V
CE
=-1V*
I
C
=-10mA, V
CE
=-1V*
I
C
=-2A, V
CE
=-1V*
I
C
=-5A, V
CE
=-1V*
I
C
=-10A, V
CE
=-1V*
MHz I
C
=-100mA, V
CE
=-10V
f=50MHz
pF
ns
V
CB
=-10V, f=1MHz*
I
C
=-1A, V
CC
=-10V,
I
B1
=I
B2
=-100mA
* Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
ISSUE 1 - JUNE 2005
SEMICONDUCTORS
4
ZXTP2012Z
TYPICAL CHARACTERISTICS
ISSUE 1 - JUNE 2005
5
SEMICONDUCTORS
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