PD-96036
HFA06TB120SPbF.. Series
HEXFRED
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low I
RRM
Very Low Q
rr
Specified at Operating Conditions
Lead-Free
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
TM
Ultrafast, Soft Recovery Diode
(K)
BASE
+
2
V
R
= 1200V
V
F
(typ.)* = 2.4V
I
F(AV)
= 6.0A
Q
rr
(typ.)= 116nC
I
RRM
(typ.) = 4.4A
(N/C)
1
3
-
_
-
(A)
t
rr
(typ.) = 26ns
di
(rec)M
/dt (typ.)* = 100A/µs
Benefits
D
2
Pak
Description
International Rectifier's HFA06TB120S is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and 6
amps continuous current, the HFA06TB120S is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to "snap-off" during the t
b
portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA06TB120S is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
V
R
I
F
@ T
C
= 100°C
I
FSM
I
FRM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
8.0
80
24
62.5
25
-55 to +150
Units
V
A
W
°C
*
125°C
www.irf.com
1
10/07/05
HFA06TB120SPbF..Series
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
BR
Cathode Anode Breakdown
Voltage
V
FM
Max. Forward Voltage
I
RM
Max. Reverse Leakage Current
C
T
L
S
Junction Capacitance
Series Inductance
2.7
3.5
2.4
3.0
3.9
2.8
µA
pF
nH
V
I
F
= 6.0A
I
F
= 12A
I
F
= 6.0A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= 0.8 x V
R
Rated
D
R
V
R
= 200V
Rated
Min. Typ. Max. Units
1200
V
Test Conditions
I
R
= 100µA
0.26 5.0
110 500
9.0
8.0
14
Measured lead to lead 5mm from pkg body
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
t
rr
t
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
di
(rec)M
/dt1 Peak Rate of Recovery
di
(rec)M
/dt2 Current During t
b
Reverse Recovery Charge
Peak Recovery Current
Reverse Recovery Time
Min. Typ. Max. Units
26
53
87
4.4
5.0
116
233
180
100
80
130
8.0
9.0
320
585
A/µs
nC
A
ns
Test Conditions
I
F
= 1.0A, di
f
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
di
f
/dt = 200A/µs
V
R
= 200V
I
F
= 6.0A
Thermal - Mechanical Characteristics
Parameter
T
lead
R
thJC
R
thJA
R
thCS
Wt
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
Min.
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Typ.
0.5
2.0
0.07
Max.
300
2.0
80
Units
°C
K/W
g
(oz)
2
www.irf.com
HFA06TB120SPbF..Series
100
1000
TJ = 150˚C
100
Reverse Current - I
R
(µA)
125˚C
100˚C
10
1
25˚C
10
Instantaneous Forward Current - I
F
(A)
0.1
0.01
0
200 400 600 800 1000 1200 1400
Reverse Voltage - V
R
(V)
100
1
T = 150˚C
J
T = 125˚C
J
T = 25˚C
J
Junction Capacitance - C
T
(pF)
T = 25˚C
J
10
0.1
0
2
4
Forward Voltage Drop - V
FM
(V)
6
1
1
10
100
1000
10000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
10
Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Resistance)
P
DM
t1
t2
0.1
Notes:
1. Duty factor D = 1 / t
t 2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
www.irf.com
3
HFA06TB120SPbF..Series
REVERSE RECOVERY CIRCUIT
V
R
= 200V
0.01
Ω
L = 70µH
D.U.T.
D
G
IRFP250
S
dif/dt
ADJUST
Fig. 9- Reverse Recovery Parameter Test Circuit
3
I
F
0
t
rr
t
a
t
b
4
Q
rr
2
I
RRM
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
1
di
f
/dt
1. di
f
/dt - Rate of change of
current
through zero
crossing
2. I
RRM
- Peak reverse
recovery current
4. Q
rr
- Area under curve
defined by t
rr
and I
RRM
t
rr
X I
RRM
3. trr - Reverse recovery
Q
rr
=
2
time measured
from zero
crossing point of negative
going I
F
to point where a line 5. di
(rec)M
/dt - Peak rate of
passing through 0.75 I
RRM
change of current during t
b
and 0.50 I
RRM
portion of t
rr
extrapolated to zero current
Fig. 10 - Reverse Recovery Waveform and Definitions
www.irf.com
5
Electronics Design Contest
京公网安备 11010802033920号
EEWORLD
