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MGF0904A

Description
L,S BAND POWER GaAs FET
CategoryDiscrete semiconductor    The transistor   
File Size281KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MGF0904A Overview

L,S BAND POWER GaAs FET

MGF0904A Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage8 V
Maximum drain current (Abs) (ID)0.8 A
Maximum drain current (ID)0.8 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment3.75 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
MITSUBISHI
ELECTRIC
June/2004

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Description L,S BAND POWER GaAs FET L,S BAND POWER GaAs FET
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