IDT71V2546S150PFG8 datasheet, PDF

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IDT71V2546S150PFG8: DescriptionZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100; Categorystorage storage; File Size508KB，28 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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IDT71V2546S150PFG8 Overview

ZBT SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100

IDT71V2546S150PFG8 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	compliant
ECCN code	3A991.B.2.A
Maximum access time	3.8 ns
Other features	PIPELINED ARCHITECTURE
JESD-30 code	R-PQFP-G100
JESD-609 code	e3
length	20 mm
memory density	4718592 bit
Memory IC Type	ZBT SRAM
memory width	36
Humidity sensitivity level	3
Number of functions	1
Number of terminals	100
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX36
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	14 mm
Base Number Matches	1

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128K x 36, 256K x 18

3.3V Synchronous ZBT™ SRAMs

2.5V I/O, Burst Counter

Pipelined Outputs

IDT71V2546S

IDT71V2548S

IDT71V2546SA

IDT71V2548SA

Features

128K x 36, 256K x 18 memory configurations

Supports high performance system speed - 150 MHz

(3.8 ns Clock-to-Data Access)

ZBT

Feature - No dead cycles between write and read

cycles

Internally synchronized output buffer enable eliminates the

need to control

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelined applications

4-word burst capability (interleaved or linear)

Individual byte write (BW

) control (May tie active)

Three chip enables for simple depth expansion

3.3V power supply (±5%), 2.5V I/O Supply (V

DDQ)

Optional Boundary Scan JTAG Interface (IEEE1149.1

complaint)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA) and 165 fine

pitch ball grid array

Description

The IDT71V2546/48 are 3.3V high-speed 4,718,592-bit (4.5 Mega-

bit) synchronous SRAMS. They are designed to eliminate dead bus cycles

when turning the bus around between reads and writes, or writes and

reads. Thus, they have been given the name ZBT

, or Zero Bus

Turnaround.

Address and control signals are applied to the SRAM during one clock

cycle, and two cycles later the associated data cycle occurs, be it read

or write.

The IDT71V2546/48 contain data I/O, address and control signal

registers. Output enable is the only asynchronous signal and can be used

to disable the outputs at any given time.

A Clock Enable (CEN) pin allows operation of the IDT71V2546/48 to

be suspended as long as necessary. All synchronous inputs are ignored

when (CEN) is high and the internal device registers will hold their previous

values.

There are three chip enable pins (CE

, CE

) that allow the user

to deselect the device when desired. If any one of these three are not

asserted when ADV/LD is low, no new memory operation can be initiated.

However, any pending data transfers (reads or writes) will be completed.

The data bus will tri-state two cycles after chip is deselected or a write is

initiated.

The IDT71V2546/48 has an on-chip burst counter. In the burst mode,

the IDT71V2546/48 can provide four cycles of data for a single address

presented to the SRAM. The order of the burst sequence is defined by the

LBO

input pin. The

LBO

pin selects between linear and interleaved burst

sequence. The ADV/LD signal is used to load a new external address

(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =

HIGH).

The IDT71V2546/48 SRAMs utilize IDT's latest high-performance

CMOS process and are packaged in a JEDEC standard 14mm x 20mm

100-pin thin plastic quad flatpack (TQFP) as well as a 119 ball grid array

(BGA) and 165 fine pitch ball grid array (fBGA).

Input

Output

Input

I/O

Supply

Synchronous

Asynchronous

Synchronous

N/A

Synchronous

Static

Synchronous

N/A

Synchronous

Asynchronous

Synchronous

Static

Pin Description Summary

-A

, CE

R/W

CEN

CLK

ADV/LD

LBO

TMS

TDI

TCK

TDO

TRST

I/O

-I/O

, I/O

-I/O

, V

DDQ

Address Inputs

Chip Enables

Output Enable

Read/Write Signal

Clock Enable

Individual Byte Write Selects

Clock

Advance burst address / Load new address

Linear / Interleaved Burst Order

Test Mode Select

Test Data Input

Test Clock

Test Data Output

JTAG Reset (Optional)

Sleep Mode

Data Input / Output

Core Power, I/O Power

Ground

MAY 2002

DSC-5294/03

5294 tbl 01

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