PD- 96095
IRF9Z30PbF
Features
P-Channel Verasatility
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Lead-Free
HEXFET
®
POWER MOSFET
Product Summary
Part Number
IRF9Z30PbF
V
DS
(V)
-50
D
R
DSON
(Ω)
0.14
I
D
(A)
-18
G
Description
S
TO-220AB
The HEXFET
®
technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient
geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high
transconductance and extreme device ruggedness.
The P-Channel HEXFETs are designed for applications which require the convenience of reverse polarity operation. They
retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of
paralleling, and excellent temperature stability.
P-Channel HEXFETs are intended for use in power stages where complementary symmetry with N-Channel devices offers
circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity
connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse
amplifiers.
Absolute Maximum Ratings
Parameter
V
DS
V
DGR
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
I
LM
I
L
T
J
T
STG
Lead Temperature
Drain-to-Source Voltage
Drain-to-Gate Voltage (R
GS
=20KΩ)
Gate-to-Source Voltage
Continuous Drain Current, V
GS
Continuous Drain Current, V
GS
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Inductive Current, Clamped (L= 100µH) See Fig. 14
Unclamped Inductive Current(Avalanche Current)
Operating Junction and
Storage Temperature Range
300 (0.063 in. (1.6mm) from case for 10s)
See Fig. 15
Max.
-50
-50
±20
-18
-11
-60
74
0.59
-60
-3.1
-55 to + 150
Units
V
A
W
W/°C
A
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
1.0
–––
Max.
1.7
–––
80
Units
°C/W
www.irf.com
03/27/07
1
IRF9Z30PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
On- State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (Gate -Source Plus Gate-Drain)
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Internal Drain Inductance
–––
L
S
Internal Source Inductance
–––
7.5
–––
4.5
–––
nH
Min. Typ. Max. Units
-50
-2.0
–––
–––
–––
–––
-18
–––
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.7
900
570
140
12
110
21
64
26
6.9
9.7
–––
-4.0
-500
500
-250
-1000
–––
–––
–––
–––
–––
18
170
32
96
39
10
15
ns
pF
V
V
nA
µA
A
Ω
S
Conditions
V
GS
= 0V, I
D
= -250µA
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -20V
V
GS
= 20V
V
DS
= Max. Rating, V
GS
= 0V
V
DS
= Max. Rating x 0.8, V
GS
= 0V, T
J
= 125°C
V
DS
> I
D(on)
X R
DS(ON)
(max)., V
GS
= -10V
V
GS
= -10V, I
D
= -9.3A
V
DS
= 2 X V
GS
, I
DS
= -9.0A
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz,
See Fig.16
(MOSFET switching times are assentially independent
of operating temperature)
VGS = -10V, ID = -18A, V
DS
= 0.8 Max. Rating
See Fig.10
V
DD
= -25V, ID = -18A, RG = 13Ω, RD = 1.3Ω
R
DS(on)
Static Drain-to-Source On-Resistance
0.093 0.14
nC See Fig.17 for test circuit (Gate charge is essentially
independent of operating temperature.)
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Measured from the source
lead, 6mm (0.25 in.) from
package to source bonding pad.
Modified MOSFET symbol
showing
the internal
device
inductances.
Source-Drain Diode Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
T
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-on Time
Min. Typ. Max. Units
–––
–––
–––
54
–––
–––
–––
120
-18
A
-60
-6.3
250
1.1
V
MOSFET symbol
showing the
integral reverse
p-n junction rectifier.
T
J
= 25°C, I
S
= -18A, V
GS
= 0V
Conditions
0.20 0.47
ns T
J
= 25°C, I
F
= -18A
µC
di/dt = 100A/µs
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
Note:
T
J
= 25°C to 150°C
Repetitive Rating :Pulse width limited by max. junction tempeature. See Transient Thermal Impedance Curve (Fig.5).
@ V
dd
= -25V, T
J
= 25°C, L = 100µH, R
G
= 25Ω.
Pulse Test : Pulse width
≤
300ms, Duty Cycle
≤
2%.
2
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