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MGF1801BT

Description
TAPE CARRIER MICROWAVE POWER GaAs FET 
CategoryDiscrete semiconductor    The transistor   
File Size331KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MGF1801BT Overview

TAPE CARRIER MICROWAVE POWER GaAs FET 

MGF1801BT Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionDISK BUTTON, O-CRDB-F4
Contacts4
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage6 V
Maximum drain current (Abs) (ID)0.25 A
Maximum drain current (ID)0.1 A
FET technologyJUNCTION
highest frequency bandX BAND
JESD-30 codeO-CRDB-F4
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.0012 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
June/2004

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