and CE2# allows 8-bit hosts to access all data on DQ0 - DQ7.
OUTPUT ENABLE:
Active low signal gating read data from the memory card.
WRITE ENABLE:
Active low signal gating write data to the memory card.
READY/BUSY OUTPUT:
Indicates status of internally timed erase or program algorithms. A high output indicates that
the card is ready to accept accesses. A low output indicates that one or more devices in the memory card are busy with
internally timed erase or write activities.
CARD DETECT 1 and 2:
Provide card insertion detection. These signals are connected to ground internally on the
memory card. The host socket interface circuitry shall supply 10K-ohm or larger pull-up resistors on these signal pins.
WRITE PROTECT:
Write protect reflects the status of the Write Protect switch on the memory card. WP set to high =
write protected, providing internal hardware write lockout to the Flash array.If card does not include optional write protect
switch, this signal will be pulled low internally indicating write protect = “off”.
PROGRAM/ERASE POWER SUPPLY:
Not connected for 5V only card.
CARD POWER SUPPLY:
5.0V for all internal circuitry.
GROUND:
for all internal circuitry.
INPUT
INPUT
OUTPUT
OUTPUT
OUTPUT
ATTRIBUTE MEMORY SELECT:
provides access to Flash memory card registers and Card Information Structure in the
Attribute Memory Plane.
RESET:
Active high signal for placing card in Power-on default state. Reset can be used as a Power-Down signal for the
memory array.
WAIT:
This signal is pulled high internally for compatibility. No wait states are generated.
BATTERY VOLTAGE DETECT:
These signals are pulled high to maintain SRAM card compatibility.
VOLTAGE SENSE:
Notifies the host socket of the card’s V
CC
requirements. VS1 and VS2 are open to indicate a 5V
card has been inserted.
4
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
CD1#, CD2#
WP
OUTPUT
OUTPUT
V
PP
1, V
PP
2
V
CC
GND
REG#
RST
WAIT
BVD1, BVD2
VS1, VS2
N.C.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 6
White Electronic Designs
Operating Temperature TA (ambient)
Commercial
Industrial
Storage Temperature
Commercial
Industrial
Voltage on any pin relative to V
SS
V
CC
supply Voltage relative to V
SS
** Advanced information
PCMCIA Flash Memory Card
FLD Series
Absolute Maximum Ratings
(2)
0°C to +60 °C
-40°C to +85 °C **
-30°C to +80 °C
-40°C to +85 °C **
-0.5V to V
CC
+0.5V (1)
-0.5V to +7.0V
Notes:
(1)
During transitions, inputs may undershoot to -2.0V or overshoot to V
CC
+2.0V for periods less than 20ns.
(2)
Stress greater than those listed under “Absolute Maximum ratings” may cause permanent damage to the device. This is a stress rating only
and functional operation at these or any other conditions greater than those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
DC Characteristics
(1)
Sym
I
CCR
I
CCW
I
CCE
I
CCS
Parameter
V
CC
Read Current
V
CC
Program Current
V
CC
Erase Current
V
CC
Standby Current
Density
(Mbytes)
All
All
All
2MB
(4MB)
Notes
Typ
(4)
Max
75
150
150
Units
mA
mA
mA
μA
Test Conditions
V
CC
= 5V +/- 10%
tcycle = 150ns
2,3
80
230
V
CC
= 5V +/- 10%
Control Signals = V
IL
or V
OH
Reset = V
SS
Test Conditions: V
CC
= 5V ± 10%, V
I
= V
IL
or V
IH
Notes:
1.
All currents are RMS values unless otherwise specified. I
CCR
, I
CCW
and I
CCE
are based on Word wide operations.
2.
Control Signals: CE
1#
, CE
2#
, OE#, WE#, REG#.
3.
I
CCD
and I
CCS
are specified for lowest density card for each component type (2MB for 8Mb components and 4MB for 16Mb components) This represents a single pair of devices.
For higher densities multiply the number of device pairs by the specified current in the table. For example a 40MB card will use 10 device pairs of 16Mb components. The
maximum I
CCD
will be 10 x 40μA = 400μA. The maximum I
CCS
will be 10 x 230μA = 2.3mA.
4. Typical: V
CC
= 5V, T = +25°C.
Symbol Parameter
I
LI
Input Leakage Current
I
LO
V
IL
V
IH
V
OL
V
OH
V
LKO
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
V
CC
Erase/ProgramLock Voltage
Notes
1
1
1
1
1
1
1
Min
Max
±20
±20
Units
μA
μA
V
V
V
V
V
Test Conditions
V
CC
= 5V +/- 10%
V
IN
=V
CC
or V
SS
V
CC
= 5V +/- 10%
V
OUT
=V
CC
or V
SS
0
2
3.98
3.2
0.8
0.26
4.2
I
OL
= 4mA
I
OH
= -4mA
Notes:
1. Values are the same for byte and word wide modes for all card densities.
2. Exceptions: Leakage currents on CE
1#
, CE
2#
, OE#, REG# and WE# will be < 500
μA
when V
IN
= GND due to internal pull-up resistors. Leakage currents on RST will be <150μA
when V
IN
=V
CC
due to internal pull-down resistor.
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
March, 2003
Rev. 6
5
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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