5962R9661402VXC datasheet, PDF

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5962R9661402VXC: Description4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDFP16, CERAMIC, FP-16; Categorylogic logic; File Size132KB，23 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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5962R9661402VXC Overview

4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDFP16, CERAMIC, FP-16

5962R9661402VXC Parametric

Parameter Name	Attribute value
Maker	Renesas Electronics Corporation
Parts packaging code	DFP
package instruction	DFP, FL16,.3
Contacts	16
Reach Compliance Code	compliant
series	4000/14000/40000
JESD-30 code	R-CDFP-F16
JESD-609 code	e4
Logic integrated circuit type	MONOSTABLE MULTIVIBRATOR
Number of data/clock inputs	2
Number of functions	2
Number of terminals	16
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
Output polarity	COMPLEMENTARY
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Encapsulate equivalent code	FL16,.3
Package shape	RECTANGULAR
Package form	FLATPACK
power supply	5/15 V
propagation delay (tpd)	675 ns
Certification status	Not Qualified
Filter level	MIL-PRF-38535 Class V
Maximum supply voltage (Vsup)	18 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
total dose	100k Rad(Si) V
Base Number Matches	1

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REVISIONS

LTR

DESCRIPTION

Changes in accordance with NOR 5962-R225-97.

DATE (YR-MO-DA)

97-02-28

APPROVED

Monica L. Poelking

Changes in accordance with NOR 5962-R390-97.

97-07-25

Raymond Monnin

Incorporate revisions A and B. Update boilerplate to MIL-PRF-38535

requirements. Editorial changes throughout. – LTG

03-10-16

Thomas M. Hess

REV

SHEET

REV

SHEET

REV STATUS

OF SHEETS

PMIC N/A

REV

SHEET

PREPARED BY

Dan Wonnell

STANDARD

MICROCIRCUIT

DRAWING

THIS DRAWING IS AVAILABLE

FOR USE BY ALL

DEPARTMENTS

AND AGENCIES OF THE

DEPARTMENT OF DEFENSE

CHECKED BY

Monica L. Poelking

APPROVED BY

Monica L. Poelking

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216

http://www.dscc.dla.mil

DRAWING APPROVAL DATE

95-12-04

MICROCIRCUIT, DIGITAL, RADIATION

HARDENED CMOS, DUAL MONOSTABLE

MULTIVIBRATOR, MONOLITHIC SILICON

AMSC N/A

REVISION LEVEL

SIZE

CAGE CODE

SHEET

67268

1 OF

5962-96614

DSCC FORM 2233

APR 97

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

5962-E016-04

1.3 Absolute maximum ratings. 1/ 2/ 3/

Supply voltage range (V

) ........................................................................................

Input voltage range ...................................................................................................

DC input current, any one input .................................................................................

Device dissipation per output transistor .....................................................................

Storage temperature range (T

STG

)..............................................................................

Lead temperature (soldering, 10 seconds) ................................................................

Thermal resistance, junction-to-case (θ

Case E ....................................................................................................................

Case X ....................................................................................................................

Thermal resistance, junction-to-ambient (θ

Case E ....................................................................................................................

Case X ....................................................................................................................

Junction temperature (T

)...........................................................................................

Maximum power dissipation at T

= +125°C (P

): 4/

Case E ....................................................................................................................

Case X ....................................................................................................................

1.4 Recommended operating conditions.

Supply voltage range (V

) ........................................................................................

Case operating temperature range (T

) .....................................................................

Input voltage (V

) ......................................................................................................

Output voltage (V

OUT

) .................................................................................................

Radiation features:

Total dose .............................................................................................................

Single event phenomenon (SEP) effective

linear energy threshold, no upsets or latchup (see 4.4.4.5) ................................

Dose rate upset (20 ns pulse) ...............................................................................

Dose rate latch-up ................................................................................................

Dose rate survivability ..........................................................................................

Neutron irradiated..................................................................................................

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in

the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

3.0 V dc to +18 V dc

-55°C to +125°C

0 V to V

1 x 10 Rads (Si)

> 75 MeV/(cm /mg) 5/

> 5 x 10 Rads(Si)/s 5/

> 2 x 10 Rads(Si)/s 5/

> 5 x 10 Rads(Si)/s 5/

> 1 x 10 neutrons/cm 6/

-0.5 V dc to +20 V dc

-0.5 V dc to V

+ 0.5 V dc

±10

100 mW

-65°C to +150°C

+265°C

24°C/W

29°C/W

73°C/W

114°C/W

+175°C

0.68 W

0.44 W

Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

Unless otherwise specified, all voltages are referenced to V

The limits for the parameters specified herein shall apply over the full specified V

range and case temperature range of

-55°C to +125°C unless otherwise noted.

If device power exceeds package dissipation capability, provide heat sinking or derate linearly (the derating is

based on

) at the following rate:

Case E ....................................................................................................................... 13.7 mW/°C

Case X ....................................................................................................................... 8.8 mW/°C

Guaranteed by design or process but not tested.

Device type 02 only.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96614

SHEET

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883 -

MIL-STD-1835 -

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 -

MIL-HDBK-780 -

List of Standard Microcircuit Drawings.

Standard Microcircuit Drawings.

Test Method Standard Microcircuits.

Interface Standard Electronic Component Case Outlines.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

3. REQUIREMENTS

3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with

MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The

modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for

device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified

herein.

3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A to this document.

3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified

in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.

3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.

3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.

3.2.3 Radiation test connections. The radiation test connections shall be as specified in table III herein.

3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the

electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full

case operating temperature range.

3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical

tests for each subgroup are defined in table I.

3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturer's PIN may also be

marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space

limitations, the manufacturer has the option of not marking the "5962-" on the device. For RHA product using this option, the

RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535.

Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.

3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a "QML" or "Q" as required in

MIL-PRF-38535. The compliance mark for device class M shall be a "C" as required in MIL-PRF-38535, appendix A.

STANDARD

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

DSCC FORM 2234

APR 97

SIZE

REVISION LEVEL

5962-96614

SHEET

5962R9661402VXC Related Products

	5962R9661402VXC	5962R9661401V9A	5962R9661402VEC	5962R9661401VEC	5962R9661402V9A	5962R9661401VXC
Description	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDFP16, CERAMIC, FP-16	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, UUC16, DIE-16	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDIP16, CERAMIC, DIP-16	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDIP16, CERAMIC, DIP-16	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, UUC16	4000/14000/40000 SERIES, DUAL MONOSTABLE MULTIVIBRATOR, CDFP16, CERAMIC, DFP-16
Parts packaging code	DFP	DIE	DIP	DIP	DIE	DFP
package instruction	DFP, FL16,.3	DIE, DIE OR CHIP	DIP, DIP16,.3	DIP, DIP16,.3	DIE, DIE OR CHIP	DFP, FL16,.3
Contacts	16	16	16	16	16	16
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
series	4000/14000/40000	4000/14000/40000	4000/14000/40000	4000/14000/40000	4000/14000/40000	4000/14000/40000
JESD-30 code	R-CDFP-F16	X-XUUC-N16	R-GDIP-T16	R-GDIP-T16	X-XUUC-N16	R-CDFP-F16
JESD-609 code	e4	e0	e4	e4	e0	e4
Logic integrated circuit type	MONOSTABLE MULTIVIBRATOR	MONOSTABLE MULTIVIBRATOR	MONOSTABLE MULTIVIBRATOR	MONOSTABLE MULTIVIBRATOR	MONOSTABLE MULTIVIBRATOR	MONOSTABLE MULTIVIBRATOR
Number of data/clock inputs	2	2	2	2	2	2
Number of functions	2	2	2	2	2	2
Number of terminals	16	16	16	16	16	16
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Output polarity	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY	COMPLEMENTARY
Package body material	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, GLASS-SEALED	CERAMIC, GLASS-SEALED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP	DIE	DIP	DIP	DIE	DFP
Encapsulate equivalent code	FL16,.3	DIE OR CHIP	DIP16,.3	DIP16,.3	DIE OR CHIP	FL16,.3
Package shape	RECTANGULAR	UNSPECIFIED	RECTANGULAR	RECTANGULAR	UNSPECIFIED	RECTANGULAR
Package form	FLATPACK	UNCASED CHIP	IN-LINE	IN-LINE	UNCASED CHIP	FLATPACK
power supply	5/15 V	5/15 V	5/15 V	5/15 V	5/15 V	5/15 V
propagation delay (tpd)	675 ns	675 ns	675 ns	675 ns	675 ns	675 ns
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V	MIL-PRF-38535 Class V
Maximum supply voltage (Vsup)	18 V	18 V	18 V	18 V	18 V	18 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	YES	YES	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	GOLD	TIN LEAD	GOLD	GOLD	TIN LEAD	GOLD
Terminal form	FLAT	NO LEAD	THROUGH-HOLE	THROUGH-HOLE	NO LEAD	FLAT
Terminal location	DUAL	UPPER	DUAL	DUAL	UPPER	DUAL
total dose	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V	100k Rad(Si) V
Base Number Matches	1	1	1	1	1	1
Terminal pitch	1.27 mm	-	2.54 mm	2.54 mm	-	1.27 mm

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