commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC
converters.
Product Summary
BV
DSS
(V)
30
R
DS(ON)
(mΩ)
6
I
D
(A)
18
Pin Assignments
S
S
S
G
1
2
3
4
8
7
6
5
Pin Descriptions
D
D
D
D
Pin Name
S
G
D
Description
Source
Gate
Drain
SO-8
Ordering information
A X
Feature
F :MOSFET
PN
4362N X X X
Package
S: SO-8
Lead Free
Blank : Normal
L : Lead Free Package
Packing
Blank : Tube or Bulk
A : Tape & Reel
This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of
this product. No rights under any patent accompany the sale of the product.
Rev. 1.1 Sep 5, 2005
1/5
AF4362N
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
T
A
=25ºC
T
A
=70ºC
T
A
=25ºC
Rating
30
±12
18
15
80
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
W
W/ºC
ºC
ºC
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
(Note 1)
Max.
Maximum
50
Units
ºC/W
Electrical Characteristics
at T
J
=25ºC unless otherwise specified
Symbol
BV
DSS
∆BV
DSS
/
∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Test Conditions
Min.
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.01
-
-
-
47
-
-
-
59
10
23
16
12
96
30
5080
660
400
Max.
-
-
5
6
8
1.2
-
1
uA
25
±100
95
-
-
-
-
-
-
8100
-
-
nA
nC
Units
V
V/
o
C
mΩ
V
S
Drain-Source Breakdown Voltage V
GS
=0V, I
D
=250uA
Breakdown Voltage Temperature Reference to 25
o
C,
I
D
=1mA
Coefficient
V
GS
=10V, I
D
=18A
Static Drain-Source
V
GS
=4.5V, I
D
=12A
On-Resistance
(Note 3)
V
GS
=2.5V, I
D
=6A
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=250uA
Forward Transconductance
V
DS
=10V, I
D
=12A
Drain-Source Leakage Current
V
DS
=30V, V
GS
=0V
(T
J
=25
o
C)
Drain-Source Leakage Current
V
DS
=24V, V
GS
=0V
(T
J
=70
o
C)
Gate-Source Leakage
V
GS
=±12V
Total Gate Charge
(Note 3)
I
D
=18A,
V
DS
=24V,
Gate-Source Charge
V
GS
=4.5V
Gate-Drain (“Miller”) Charge
Turn-On Delay Time
(Note 3)
V
DS
=15V,
I
D
=1A,
Rise Time
R
G
=3.3Ω, V
GS
=10V
Turn-Off Delay Time
R
D
=15Ω
Fall-Time
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Output Capacitance
f=1.0MHz
Reverse Transfer Capacitance
ns
pF
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
(Note 3)
Reverse Recovery Time
Reverse Recovery Charge
2
Test Conditions
I
S
=18A, V
GS
=0V
I
S
=18A, V
GS
=0V,
dl/dt=100A/µs
o
Min.
-
-
-
Typ.
-
43
39
Max.
1.2
-
-
Unit
V
ns
nC
Note 1:
Surface mounted on 1 in copper pad of FR4 board; 125 C/W when mounted on Min. copper pad.
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