APM3011N
N-Channel Enhancement Mode MOSFET
Features
•
•
•
•
30V/60A , R
DS(ON)
=9mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=14mΩ(typ.) @ V
GS
=5V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-220, TO-252 and TO-263 Packages
Pin Description
Applications
•
Power Management in Desktop Computer or
DC/DC Converters Systems.
Top View of TO-220 , TO-252 and TO-263
Ordering and Marking Information
APM3011N
Handling Code
Temp. Range
Package Code
Package Code
F : TO-220 U :TO-252
Temp. Range
C : 0 to 70
°
C
Handling Code
TU : Tube
TR : Tape & Reel
G : TO-263
APM 3011N G/U/F :
APM 3011N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D*
I
DM
Gate-Source Voltage
Parameter
Drain-Source Voltage
(T
A
= 25°C unless otherwise noted)
Rating
30
±20
60
120
Unit
V
A
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
* Surface Mounted on FR4 Board, t
≤
10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
1
www.anpec.com.tw
APM3011N
Absolute Maximum Ratings Cont.
Symbol
P
D
Parameter
Maxim um Power Dissipation
T
A
=25°C
T
A
=100°C
T
J
T
STG
R
θJA
R
θJC
Maxim um Junction Tem perature
Storage Tem perature Range
Thermal Resistance – Junction to Ambient
Thermal Resistance – Junction to Case
TO-252
TO-263
TO-252
TO-263
(T
A
= 25°C unless otherwise noted)
Rating
50
62.5
20
25
150
-55 to 150
50
2.5
Unit
W
W
°
C
°C
°C/W
°
C/W
Electrical Characteristics
Symbol
Static
BV
DSS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
Sd
a
Dynamic
b
Q
g
Q
gs
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Parameter
Drain-Source Breakdown
V lt Gate Voltage Drain
Zero
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(T
A
= 25°C unless otherwise noted)
APM3011N
Typ.
Max.
Min.
30
1
5
3
±100
11
18
1.2
28
nC
14
12
45
16
Test Condition
V
GS
=0V, I
DS
=250µA
V
DS
=24V , V
GS
=0V
V
DS
=24V, V
GS
=0V, T
j
= 55°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=30A
V
GS
=5V, I
DS
=15A
I
SD
=24A, V
GS
=0V
V
DS
=15V, I
DS
=30A
V
GS
=4.5V
V
DD
=15V, I
DS
=1A,
V
GEN
=10V, R
G
=0.2Ω
V
GS
=0V
V
DS
=15V
Frequency =1.0MHz
Unit
V
µA
V
nA
mΩ
V
1
9
14
0.6
22
12.8
5
9
6
30
8
2000
420
210
ns
pF
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
2
www.anpec.com.tw
APM3011N
Typical Characteristics
Output Characteristics
70
50
Transfer Characteristics
V
DS
=10V
60
VG=4,4.5,6,8,10V
I
DS
-Drain Current (A)
50
V
GS
=3V
I
DS
-Drain Current (A)
40
40
30
30
20
T
J
=25°C
20
V
GS
=2.5V
10
T
J
=125°C
T
J
=-55°C
10
0
1.0
0
0
1
2
3
4
5
6
7
8
9
10
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
-Drain-to-Source Voltage (V)
V
GS
-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
On-Resistance vs. Drain Current
0.020
I
DS
=250µA
R
DS(ON)
-On-Resistance (Ω)
V
GS
=5V
0.016
V
GS(th)
-Variance (V)
1.0
0.012
0.8
V
GS
=10V
0.008
0.6
0.004
0.4
-50
-25
0
25
50
75
100
125
150
0.000
0
10
20
30
40
50
60
T
j
-Junction Temperature (°C)
I
DS
-Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
3
www.anpec.com.tw
APM3011N
Typical Characteristics Cont.
On-Resistance vs. Gate-to-Source Voltage
0.035
On-Resistaence vs. Junction Temperature
R
DS(ON)
-On Resistance (Ω) (Normalized)
1.6
I
DS
=30A
R
DS (ON)
-On-Resistance (Ω)
0.030
V
GS
=10V
I
DS
=30A
1.4
0.025
0.020
1.2
0.015
1.0
0.010
0.8
0.005
0.000
3
4
5
6
7
8
9
10
0.6
-50
-25
0
25
50
75
100
125
150
Gate Voltage (V)
T
j
-Junction Temperature (°C)
Gate Charge
10
3000
Capacitance Characteristics
V
GS
-Gate-to-Source Voltage (V)
V
DS
=15V
I
DS
=20A
2000
Ciss
C-Capacitance (pF)
8
1000
6
Coss
500
4
2
Crss
Frequency=1MHz
0
0
10
20
30
40
50
100
0.1
1
10
30
Q
G
-Total-Gate Charge (nC)
V
DS
-Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
4
www.anpec.com.tw
APM3011N
Typical Characteristics Cont.
Source-Drain Diode Forward Voltage
100
3000
Single Pulse Power
2500
I
SD
-Source Current (A)
10
2000
Power (W)
1500
1
T
J
=125°C
T
J
=25°C
T
J
=-55°C
1000
500
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
-
1 05
-
-
-
-
1 04
1 03
1 02
1 01
1 00
V
SD
-Source to Drain Voltage
Time (sec)
Transient Thermal Response Curve
1
Duty Cycle=0.5
Normalized Effective Transient
Thermal Impedance
D=0.2
D=0.1
0 .1
D=0.05
D=0.02
D=0.01
SINGLE PULSE
1. Duty Cycle , D=t1/t2
2. Per Unit Base=R
thJA
=62.5°C/W
3. T
JM
-T
A
=P
DM
Z
thJA
0 .0 1
-5
10
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.3 - Mar., 2002
5
www.anpec.com.tw
京公网安备 11010802033920号
EEWORLD
