PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ NE5510179A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
• HIGH LINEAR GAIN:
11 dB TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 5dBm
• HIGH POWER ADDED EFFICIENCY:
50% TYP
V
DS
= 3.5 V, I
DQ
= 200 mA, f = 1.9 GHz, P
IN
= 22 dBm
• SINGLE SUPPLY:
2.8 to 6.0 V
• SURFACE MOUNT PACKAGE:
5.7
x
5.7
x
1.1 mm MAX
4.2 Max
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE 79A
1.5 – 0.2
Source
Source
5.7 Max
0.6 – 0.15
X
Gate
Drain
0.8 – 0.15
4.4 Max
Gate
1.0 Max
Drain
1.2 Max
0.8 Max
3.6 – 0.2
5.7 Max
8
0.4 – 0.15
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6
µm
WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS:
1.6 - 2.0 GHz TDMA Applications
ELECTRICAL CHARACTERISTICS
(T
A
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
GSS
I
DSS
V
TH
gm
R
DS (ON)
BV
DSS
CHARACTERISTICS
Gate-to-Source Leakage Current
Drain-to-Source Leakage Current
Gate Threshold Voltage
Transconductance
Drain-to-Source On Resistance
Drain-to-Source Breakdown Voltage
V
= 25°C)
NE5510179A
79A
UNITS
nA
nA
V
S
MIN
TYP
0.9 – 0.2
MAX
100
100
0.2 – 0.1
TEST CONDITIONS
V
GSS
= 6.0 V
V
DSS
= 8.5 V
V
DS
= 3.5 V, I
DS
=
1 mA
V
DS
= 3.5 V, I
DS1
=
300 mA, I
DS2
=
500 mA
V
GS
= 6.0 V, V
DS
=
0.5 V
I
DSS
= 10 A
1.0
1.35
0.82
0.5
2.0
20
24
California Eastern Laboratories
NE5510179A
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
°C)
SYMBOLS
V
DS
V
GS
I
D
I
D
P
IN
P
T
T
CH
T
STG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (continuous)
Drain Current (Pulse Test)
2
Input Power
3
Total Power Dissipation
Channel Temperature
Storage Temperature
A
dBm
W
°C
°C
UNITS
V
V
RATINGS
8.5
6
A0.5
1.0
27
1.6
125
-55 to +125
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
V
DS
V
GS
I
DS
P
IN
freq
T
OP
PARAMETERS
Drain to Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
1
Input Power
2
Operating Frequency Range
Operating Temperature
UNITS
V
V
A
dBm
GHz
°C
TYP
3.5
2.0
–
22
–
25
MAX
6.0
2.5
0.5
23
2.0
85
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, V
DS
= 3.5 V.
Note:
1. Duty Cycle 50%, Ton = 1ms.
2. Freq = 1.9 GHz, V
DS
= 3.5 V.
ORDERING INFORMATION
1
PART NUMBER
NE5510179A-T1
Note:
QTY
1 K/Reel
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT vs.
DRAIN TO SOURCE CURRENT
6.0
V
GS
(MAX) = 10 V,
Step = 1.0 V
5.0
(T
A
= 25°C)
1. Embossed tape 12 mm wide. Gate pin face to perforations side
of the tape.
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
V
DS
= 3.5 V
Drain Current, I
DQ
(mA)
0
2
4
6
8
10
12
14
16
Drain Current, I
D
(A)
100
4.0
3.0
10
2.0
1
1.0
0.0
0
1.0
1.5
2.0
2.5
3.0
Drain to Source Current, V
DS
(V)
Gate to Source Voltage, V
GS
(V)
NE5510179A
TYPICAL PERFORMANCE CURVES
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
31
P
O
= 29.7 dBm
(T
A
= 25°C)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
31
P
MAX
= 30.1 dBm
1250
1250
Efficiency, Power Added Efficiency,
η, η
ADD
%
26
V
DS
= 3.5 V,
I
DQ
= 200 mA,
freq = 1.9 GHz
P
OUT
1000
30
V
DS
= 3.5 V,
freq = 1.9 GHz,
PIN = 22 dBm
1000
P
OUT
750
I
DS
21
750
29
16
I
D
500
η
250
η
ADD
100
28
η
27
η
ADD
26
0.0
APC
1.0
2.0
3.0
500
100
11
50
250
50
6
0
5
10
15
20
25
0
0
0
4.0
0
Input Power, P
IN
(dBm)
Gate to Source Voltage, V
GS
(V)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. GATE TO SOURCE
VOLTAGE
Drain Current, I
DS
(mA)
Efficiency, Power Added Efficiency,
η, η
ADD
%
30
P
O
= 28.7 dBm
1250
1250
P
MAX
= 29.0 dBm
Output Power, P
OUT
(dBm)
Output Power, P
OUT
(dBm)
25
V
DS
= 2.8 V,
I
DQ
= 200 mA,
freq = 1.9 GHz
P
OUT
1000
29
V
DS
= 2.8 V,
freq = 1.9 GHz,
P
IN
= 22 dBm
1000
P
OUT
750
20
750
28
I
ds
15
I
D
500
η
250
η
ADD
100
27
η
26
η
ADD
25
0.0
APC
1.0
2.0
3.0
500
100
10
50
250
50
5
0
0
5
10
15
20
25
0
0
4.0
0
Input Power, P
IN
(dBm)
Gate to Source Voltage, V
GS
(V)
P.C.B. LAYOUT
1
(Units in mm)
4.0
1.7
Drain
Gate
5.9
1.2
Source
0.5
6.1
0.5
0.5
Through hole
φ
0.2
×
33
1.0
Note:
1. Use rosin or other material to prevent solder from penetrating
through-holes.
Efficiency, Power Added Efficiency,
η, η
ADD
%
30
30
Drain Current, I
DS
(mA)
OUTPUT POWER, DRAIN CURRENT,
EFFICIENCY, AND POWER ADDED
EFFICIENCY VS. INPUT POWER
Efficiency, Power Added Efficiency,
η, η
ADD
%
Output Power, P
OUT
(dBm)
Drain Current, I
DS
(mA)
Output Power, P
OUT
(dBm)
Drain Current, I
DS
(mA)
NE5510179A
TYPICAL SCATTERING PARAMETERS
1
(T
A
= 25°C)
Note:
1. This file and many other s-parameter files can be downloaded from www.cel.com
NE5510179A
V
DS
= 3.5 V, I
DS
= 200 mA
FREQUENCY
GHz
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
Note:
1. Gain Calculation:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.83
0.80
0.80
0.81
0.82
0.82
0.83
0.85
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.91
0.91
0.92
0.91
0.91
0.92
0.91
0.92
0.92
0.92
ANG
-121.10
-148.10
-158.20
-163.40
-166.80
-169.40
-171.40
-173.40
-175.00
-176.70
-178.40
180.00
178.00
176.50
174.90
172.90
170.90
169.30
167.00
165.10
162.20
160.80
158.30
156.10
153.50
151.50
149.10
147.10
145.00
142.90
MAG
13.84
7.49
4.96
3.67
2.90
2.32
1.96
1.63
1.43
1.23
1.10
0.96
0.86
0.78
0.71
0.65
0.57
0.54
0.49
0.47
0.42
0.39
0.35
0.35
0.31
0.30
0.26
0.27
0.24
0.24
S
21
ANG
111.30
93.60
84.60
77.10
71.20
66.20
61.70
57.30
52.60
50.30
46.20
44.30
39.90
38.10
34.20
33.30
29.90
27.10
24.40
23.80
20.50
19.10
15.20
13.40
13.00
12.20
9.50
4.80
6.40
4.80
MAG
0.03
0.03
0.03
0.03
0.03
0.02
0.02
0.02
0.02
0.02
0.02
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.00
0.00
0.00
0.00
0.00
0.00
0.00
0.01
0.00
0.01
S
12
ANG
23.50
6.70
-2.60
-8.30
-13.30
-17.20
-18.30
-22.70
-24.60
-24.60
-29.30
-27.90
-28.10
-29.10
-31.70
-35.20
-28.20
-23.90
-23.00
-15.10
-3.70
-4.10
6.00
13.90
15.10
31.80
45.00
48.10
62.00
57.70
MAG
0.65
0.71
0.74
0.75
0.77
0.79
0.80
0.81
0.83
0.84
0.85
0.86
0.87
0.88
0.88
0.89
0.89
0.90
0.90
0.91
0.90
0.91
0.92
0.92
0.92
0.92
0.91
0.94
0.92
0.93
S
22
ANG
-154.00
-164.80
-168.50
-170.50
-171.60
-172.70
-173.40
-174.60
-175.50
-176.70
-177.50
-178.90
179.80
178.40
177.60
175.80
174.70
172.50
171.20
169.50
167.80
166.00
163.50
162.00
160.60
157.90
155.70
153.50
152.40
150.20
K
-0.13
-0.12
-0.04
0.07
0.10
0.24
0.34
0.38
0.50
0.59
0.61
0.83
0.90
0.91
0.89
1.27
1.75
1.66
2.29
1.98
4.25
4.63
4.77
3.34
5.26
4.70
5.87
2.45
4.02
2.75
MAG
1
(dB)
26.50
23.60
21.80
20.60
19.60
19.00
18.60
18.00
17.80
17.30
17.20
17.00
16.80
16.60
16.20
13.50
11.40
12.20
10.50
11.10
8.60
8.50
7.90
8.30
7.00
6.60
5.00
7.60
5.30
6.60
(
K –
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES
•
Headquarters
•
4590 Patrick Henry Drive
•
Santa Clara, CA 95054-1817
•
(408) 988-3500
•
Telex 34-6393
•
FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)
•
Internet: http://WWW.CEL.COM
07/05/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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