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71V2556SA166BGI8

Description
ZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA119, BGA-119
Categorystorage    storage   
File Size344KB,23 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

71V2556SA166BGI8 Overview

ZBT SRAM, 128KX36, 3.5ns, CMOS, PBGA119, BGA-119

71V2556SA166BGI8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time3.5 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)166 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density4718592 bit
Memory IC TypeZBT SRAM
memory width36
Humidity sensitivity level3
Number of functions1
Number of terminals119
word count131072 words
character code128000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize128KX36
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)225
power supply2.5,3.3 V
Certification statusNot Qualified
Maximum seat height2.36 mm
Maximum standby current0.045 A
Minimum standby current3.14 V
Maximum slew rate0.36 mA
Maximum supply voltage (Vsup)3.465 V
Minimum supply voltage (Vsup)3.135 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn63Pb37)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature20
width14 mm
Base Number Matches1
128K x 36
3.3V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
IDT71V2556S/XS
IDT71V2556SA/XSA
Features
128K x 36 memory configurations
Supports high performance system speed - 166 MHz
(3.5 ns Clock-to-Data Access)
ZBT
TM
Feature - No dead cycles between write and read
cycles
Internally synchronized output buffer enable eliminates the
need to control
OE
Single R/W (READ/WRITE) control pin
Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
4-word burst capability (interleaved or linear)
Individual byte write (BW
1
-
BW
4
) control (May tie active)
Three chip enables for simple depth expansion
3.3V power supply (±5%), 2.5V I/O Supply (V
DDQ)
Optional - Boundary Scan JTAG Interface (IEEE 1149.1
complaint)
Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP) and 119 ball grid array (BGA)
The IDT71V2556 is a 3.3V high-speed 4,718,592-bit (4.5 Megabit)
synchronous SRAM. It is designed to eliminate dead bus cycles when
turning the bus around between reads and writes, or writes and reads.
Thus, they have been given the name ZBT
TM
, or Zero Bus Turnaround.
Description
Address and control signals are applied to the SRAM during one clock
cycle, and two cycles later the associated data cycle occurs, be it read
or write.
The IDT71V2556 contains data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable (CEN) pin allows operation of the IDT71V2556 to be
suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the user
to deselect the device when desired. If any one of these three are not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
The data bus will tri-state two cycles after chip is deselected or a write is
initiated.
The IDT71V2556 has an on-chip burst counter. In the burst mode, the
IDT71V2556 can provide four cycles of data for a single address
presented to the SRAM. The order of the burst sequence is defined by the
LBO
input pin. The
LBO
pin selects between linear and interleaved burst
sequence. The ADV/LD signal is used to load a new external address
(ADV/LD = LOW) or increment the internal burst counter (ADV/LD =
HIGH).
The IDT71V2556 SRAMs utilize IDT's latest high-performance CMOS
process and are packaged in a JEDEC standard 14mm x 20mm 100-pin
thin plastic quad flatpack (TQFP) as well as a 119 ball grid array (BGA).
Pin Description Summary
A
0
-A
16
CE
1
, CE
2
,
CE
2
OE
R/
W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/
LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Ad d re ss Inp uts
Chip Enab le s
Outp ut Enab le
Re ad /Write Sig nal
Clo ck Enab le
Ind ivid ual Byte Write Se le cts
Clo ck
Ad vance b urst ad d re ss / Lo ad ne w ad d re ss
Line ar / Inte rle ave d Burst Ord e r
Te st Mo d e Se le ct
Te st Data Inp ut
Te st Clo ck
Te st Data Outp ut
JTAG Re se t (Op tio nal)
S le e p Mo d e
Data Inp ut / Outp ut
Co re Po we r, I/O Po we r
Gro und
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Inp ut
Outp ut
Inp ut
Inp ut
I/O
Sup p ly
Sup p ly
Synchro no us
Synchro no us
Asynchro no us
Synchro no us
Synchro no us
Synchro no us
N/A
Synchro no us
Static
Synchro no us
Synchro no us
N/A
Synchro no us
Asynchro no us
Synchro no us
Synchro no us
Static
Static
4875 tb l 01
1
©2011
Integrated Device Technology, Inc.
APRIL 2011
DSC-4875/12
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