RA03M8087M_06 datasheet, PDF - EEWORLD Datasheet

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RA03M8087M_06: Description806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER; CategoryTopical application Wireless rf/communication; File Size91KB，8 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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RA03M8087M_06 Overview

806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

RA03M8087M_06 Parametric

Parameter Name	Attribute value
Maximum operating temperature	90 Cel
Minimum operating temperature	-30 Cel
Maximum input power	18.45 dBm
Maximum operating frequency	870 MHz
Minimum operating frequency	806 MHz
Processing package description	ROHS COMPLIANT, H46S, 4 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
Maximum voltage standing wave ratio	4
structure	MODULE
terminal coating	NOT SPECIFIED
Impedance characteristics	50 ohm
Microwave RF Type	NARROW BAND HIGH POWER

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MITSUBISHI RF MOSFET MODULE

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

RA03M8087M

BLOCK DIAGRAM

RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO

DESCRIPTION

The RA03M8087M is a 3.6-watt RF MOSFET Amplifier

Module for 7.2-volt portable radios that operate in the 806 to

870-MHz range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. Without the gate

voltage (V

=0V), only a small leakage current flows into the

drain and the RF input signal attenuates up to 60 dB. The output

power and drain current increase as the gate voltage increases.

With a gate voltage around 2.5V (minimum), output power and

drain current increases substantially. The nominal output power

becomes available at 3V (typical) and 3.5V (maximum). At

=3.5V, the typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power

with the input power.

FEATURES

• Enhancement-Mode MOSFET Transistors

≅0

@ V

=7.2V, V

=0V)

• P

out

>3.6W @ V

=7.2V, V

=3.5V, P

=50mW

•

>32% @ P

out

=3W (V

control), V

=7.2V, P

=50mW

• Broadband Frequency Range: 806-870MHz

• Low-Power Control Current I

=1mA (typ) at V

=3.5V

• Module Size: 30 x 10 x 5.4 mm

• Linear operation is possible by setting the quiescent drain

current with the gate voltage and controlling the output power

with the input power.

RF Input (P

)

Gate Voltage (V

), Power Control

Drain Voltage (V

), Battery

RF Output (P

out

)

RF Ground (Case)

PACKAGE CODE: H46S

RoHS COMPLIANT

• RA03M8087M-101 is a RoHS compliant products.

• RoHS compliance is indicate by the letter “G” after the Lot Marking.

• This product include the lead in the Glass of electronic parts and the

lead in electronic Ceramic parts.

How ever ,it applicable to the following exceptions of RoHS Directions.

1.Lead in the Glass of a cathode-ray tube, electronic parts, and

fluorescent tubes.

2.Lead in electronic Ceramic parts.

ORDERING INFORMATION:

ORDER NUMBER

RA03M8087M-101

SUPPLY FORM

Antistatic tray,

25 modules/tray

RA03M8087M

MITSUBISHI ELECTRIC

1/8

24 Jan 2006

RA03M8087M_06 Related Products

	RA03M8087M_06	RA03M8087M	RA03M8087M-101
Description	806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER	806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER	806 MHz - 870 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Maximum operating temperature	90 Cel	110 °C	90 °C
Minimum operating temperature	-30 Cel	-30 °C	-30 °C
Maximum operating frequency	870 MHz	870 MHz	870 MHz
Minimum operating frequency	806 MHz	806 MHz	806 MHz
Maximum voltage standing wave ratio	4	4	4
structure	MODULE	COMPONENT	MODULE
Maker	-	Mitsubishi	Mitsubishi
package instruction	-	FLNG,1.0\"H.SPACE	FLNG,1.0\"H.SPACE
Reach Compliance Code	-	unknow	unknow
Characteristic impedance	-	50 Ω	50 Ω
Maximum input power (CW)	-	18 dBm	18.45 dBm
Number of functions	-	1	1
Encapsulate equivalent code	-	FLNG,1.0\"H.SPACE	FLNG,1.0\"H.SPACE
power supply	-	7.2 V	3.5,7.2 V
RF/Microwave Device Types	-	NARROW BAND HIGH POWER	NARROW BAND HIGH POWER
technology	-	HYBRID	HYBRID

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