CLT130W, CLT131W, CLT132W
NPN Silicon Phototransistors
The CLT130W, CLT131W and CLT132W are
exact replacements for obsolete part numbers
CLT2020, CLT2030 and CLT2035.
0.210 (5.33)
0.190 (4.83)
0.500 (12.7) min
0.190 (4.83)
0.176 (4.47)
®
Clairex
0.215 (5.46)
0.205 (5.21)
Technologies, Inc
.
July, 2001
COLLECTOR
0.160 (4.06)
0.150 (3.81)
BASE
EMITTER
0.100 (2.54) dia
0.010 (0.25)
max
0.025 (0.64)
max
0.019 (0.48)
0.016 (0.41)
0.147 (3.73)
0.137 (3.48)
ALL DIMENSIONS ARE IN INCHES
Case 18
(MILLIMETERS)
Collector electrically
connected to case.
features
absolute maximum ratings
(T
A
= 25°C unless otherwise stated)
storage temperature ...................................................................... -65°C to +200°C
•
high sensitivity
operating temperature.................................................................... -65°C to +150°C
•
± 35° acceptance angle
(1)
•
TO-18 hermetically sealed package lead soldering temperature ......................................................................... 260°C
collector-emitter voltage..................................................................................... 30V
•
transistor base is bonded
continuous collector current
(2)
......................................................................... 50mA
•
RoHS compliant
continuous power dissipation
(3)
.................................................................... 250mW
description
notes:
The CLT130W, CLT131W and
1. 0.06” (1.5mm) from the header for 5 seconds maximum.
CLT132W are silicon NPN planar
2. 200mA when pulsed at 1.0ms, 10% duty cycle.
epitaxial phototransistors mounted in
3. Derate linearly 1.6mW/°C from 25°C free air temperature to T
A
= +150°C.
TO-18 flat window packages. The
wide acceptance angle provided by
the flat window enables even
reception over a relatively large area.
For additional information, call
Clairex
electrical characteristics
(T
A
= 25°C unless otherwise noted)
symbol
parameter
Light current
(4)
I
L
I
CEO
V
(BR)CEO
V
(BR)CBO
V
(BR)ECO
V
CE(sat)
t
r
, t
f
θ
HP
notes:
min
CLT130W
CLT131W
CLT132W
0.4
1.0
2.5
-
30
5.0
5.0
-
-
-
typ
-
-
-
-
-
-
-
3.0
70
max
-
-
-
25
-
-
-
0.30
-
-
units
mA
mA
mA
nA
V
V
V
V
µs
deg.
test conditions
V
CE
=5V, E
e
=5.0mW/cm
2
V
CE
=5V, E
e
=5.0mW/cm
2
V
CE
=5V, E
e
=5.0mW/cm
2
V
CE
=10V, E
e
=0
I
C
=100µA, E
e
=0
I
C
=100µA, E
e
=0
I
E
=100µA, E
e
=0
I
C
=0.4mA, E
e
=5.0mW/cm
2
V
CC
=5V, R
L
=1KΩ
Collector dark current
Collector-emitter breakdown
Collector-base breakdown
Emitter-collector breakdown
Collector-emitter saturation voltage
Output rise and fall time
(5)
Total angle at half sensitivity points
4. Radiation source for all light current testing is a 850nm IRED.
5. The radiation source is a pulsed gallium arsenide IRED with rise and fall times of
≤0.3µs.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/22/06
Clairex Technologies, Inc.
Phone: 972-265-4900
1301 East Plano Parkway
Fax: 972-265-4949
Plano, Texas 75074-8524
www.clairex.com
Microchip MCU
京公网安备 11010802033920号
EEWORLD
