5962-9309101HXC datasheet, PDF

5962-9309101HXC: DescriptionEEPROM Module, 512KX8, 150ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32; Categorystorage storage; File Size351KB，12 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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5962-9309101HXC Overview

EEPROM Module, 512KX8, 150ns, Parallel, CMOS, CDIP32, DUAL CAVITY, SIDE BRAZED, HERMETIC SEALED, CERAMIC, DIP-32

Parameter Name	Attribute value
Objectid	1148095668
Parts packaging code	DIP
package instruction	DIP,
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	150 ns
Other features	AUTOMATIC WRITE
JESD-30 code	R-CDIP-T32
JESD-609 code	e4
length	42.4 mm
memory density	4194304 bit
Memory IC Type	EEPROM MODULE
memory width	8
Number of functions	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	6.98 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	GOLD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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