IC66LV10016AL
16M-BIT (1M-WORD BY 16-BIT) Low-Power Pseudo SRAM
FEATURES
• Organization : 1M x 16
• Power Supply Voltage : 2.7~3.3V
•
Three state output and TTL Compatible
DESCRIPTION
The IC66LV10016AL is a family of low voltage, low power
16Mbit static RAM organized as 1M-words by 16-bit,
designed with Pseudo SRAM technology, fabricated with
CMOS process technology.
The IC66LV10016AL is designed specifically for low-power
applications such as mobile cellular phones, personal digital
assistants and other battery-operated products.
The operation modes are determined by a combination of the
device control inputs
CE
,
ZZ, LB
,
UB
,
WE
and
OE
. Each
mode is summarized in the function table.
A write operation is executed whenever the low level
WE
overlaps with the low level
LB
and/or
UB
and the low level
CE
and the high level
ZZ.
The address (A0~A19) must be set up
before the write cycle and must be stable during entire cycle.
A read operation is executed by setting
WE
at a high level and
OE
at a low level while
LB
and/or
UB
and
CE
are in an active
state,
ZZ
is in a inactive state.
When setting
LB
at the high level and other controls are in an
active stage, upper-byte is selected for read and write
operations, and lower-byte is not selected. When setting
UB
at a high level and other pins are in an active stage, lower-byte
is selected and upper-byte is not.
When setting
LB
and
UB
at a high level or
CE
and
ZZ
at a high
level or
ZZ
at a low level, the chip is in a non-select mode. In
this mode, the output stage is in a high-impedance state,
allowing OR-tie with other chips.
When
OE
is at a high level, the output stage is in a high-
impedance state.
• Package Type : 48-FBGA-6.00x8.00 mm
2
•
Address Acess Time : 70ns
PART NAME TABLE & KEY SPEC SUMMARY
Product Family
Deep powe
Operating Operating Voltage Speed
down
Standby Operating PKG Type
Temperature (VCC/VCCQ)
(I
ZZ
,Max) (I
SB
2,Max) (Icc2,Max)
2.7-3.3V
70ns
25µA
70µA
20mA
48-TFBGA
IC66LV10016AL-70B Extended
(-25-85°C)
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
PSR002-0A 02/05/2004
IC66LV10016AL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
IN
,V
OUT
Vcc
PD
T
STG
Toper
Parameter
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage Temperature
Operating Temperature
Ratings
-0.2 to Vcc+0.3
-0.2 to 3.6
1.0
-65 to 150
-25 to 85
Unit
V
V
W
°C
°C
Note:
Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS
Symbol
V
CC
V
IH
V
IL
I
LI
I
LO
V
OL
V
OH
Parameter
(1)
Conditions
Min
2.7
Vcc-0.3
-0.3
(3)
-1
-1
Max
3.3
Vcc+0.3
(2)
0.3
1
1
0.3
Units
V
V
V
µA
µA
V
V
Supply Voltage
Input High Voltage
Input Low Voltage
Input Leakage current
V
IN
=Vss to Vcc
Output Leakage current V
OUT
=Vss to Vcc
Output Disable
Output low Voltage
Output high Voltage
I
OL
=0.5mA
I
OH
=-0.5mA
Vcc-0.3
Notes:
1. Toper=-25 to 85°C, otherwise specified.
2. Overshoot : Vcc+1.0V in case of pulse width
≤
20ns
3. Undershoot : -1.0V in case of pulse width
≤
20ns
4. Overshoot and undershoot are sampled, not 100% tested.
POWER CONSUMPTION CHARACTERISTICS
Symbol
I
CC
1
Parameter
Vcc operating
supply current
Vcc Dynamic operation
supply current
TTL Standby Current
( TTL inputs )
CMOS Standby Current
( CMOS inputs )
Deep power down mode
Conditions
Cycle time=1µs,100% duty
I
OUT
=0mA,CE≤0.2V,ZZ=V
IH
,
V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Cycle time=tRCmin,100% duty
I
OUT
=0mA,CE=V
IL
,ZZ=V
IH
,
V
IN
=V
IL
or V
IH
CE=V
IH
,ZZ=V
IH
,
Other inputs=V
IL
or V
IH
CE≥Vcc-0.2V,ZZ≥Vcc-0.2V,
V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
ZZ≤0.2V,
V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Min
—
Max
3
Units
mA
I
CC
2
—
20
mA
I
SB
1
I
SB
2
I
ZZ
—
—
—
0.3
70
25
mA
µA
µA
CAPACITANCE
Symbol
C
IN
C
IO
Parameter
Input Capacitance
Output Capacitance
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Notes
pF
pF
5
Integrated Circuit Solution Inc.
PSR002-0A 02/05/2004
Embedded System
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