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5SMX12L2516

Description
Insulated Gate Bipolar Transistor, 54A I(C), 2500V V(BR)CES, N-Channel, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size66KB,5 Pages
ManufacturerABB
Websitehttp://www.abb.com/
Download Datasheet Parametric View All

5SMX12L2516 Overview

Insulated Gate Bipolar Transistor, 54A I(C), 2500V V(BR)CES, N-Channel, DIE-2

5SMX12L2516 Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codecompli
Maximum collector current (IC)54 A
Collector-emitter maximum voltage2500 V
ConfigurationSINGLE
JESD-30 codeS-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)1340 ns
Nominal on time (ton)630 ns
Base Number Matches1
V
CE
I
C
=
=
2500 V
54 A
IGBT-Die
5SMX 12L2516
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA 1317-01 11 11
Ultra low loss thin IGBT die
Highly rugged SPT design
Emitter metallisation optimized for press-pack packaging
Passivation: SIPOS and Silicon Nitride plus Polyimide
Maximum rated values
Parameter
Collector-emitter voltage
DC collector current
Peak collector current
Gate-emitter voltage
IGBT short circuit SOA
Junction temperature
1)
1)
Symbol Conditions
V
CES
I
C
I
CM
V
GES
t
psc
T
vj
V
CC
= 2000 V, V
CEM
2500 V
V
GE
15 V, T
vj
125 °C
Limited by T
vjmax
V
GE
= 0 V
min
max
2500
54
108
Unit
V
A
A
V
µs
°C
-20
20
10
-40
125
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
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