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40MT120UHAPBF

Description
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN
CategoryDiscrete semiconductor    The transistor   
File Size683KB,13 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

40MT120UHAPBF Overview

Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN

40MT120UHAPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-XUFM-X13
Contacts13
Reach Compliance Codecompliant
Shell connectionISOLATED
Maximum collector current (IC)80 A
Collector-emitter maximum voltage1200 V
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-XUFM-X13
Number of components2
Number of terminals13
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperature40
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Base Number Matches1
Bulletin I27194 03/05
40MT120UHA
40MT120UHTA
"HALF-BRIDGE" IGBT MTP
Features
UltraFast Non Punch Through (NPT)
UltraFast NPT IGBT
Technology
Positive V
CE(ON)
Temperature Coefficient
10µs Short Circuit Capability
HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery and Low V
F
Square RBSOA
Al
2
O
3
DBC
Optional SMD Thermistor (NTC)
Very Low Stray Inductance Design for
High Speed Operation
V
CES
= 1200V
I
C
= 80A
Benefits
Optimized for Welding, UPS and SMPS
Applications
Rugged with UltraFast Performance
Benchmark Efficiency above 20KHz
Outstanding ZVS and Hard Switching
Operation
Low EMI, requires Less Snubbing
Excellent Current Sharing in Parallel
Operation
Direct Mounting to Heatsink
PCB Solderable Terminals
Very Low Junction-to-Case Thermal Resis
tance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
I
I
CM
LM
Max
1200
@ T
C
= 22°C
@ T
C
= 104°C
80
40
160
160
@ T
C
= 105°C
21
160
± 20
2500
463
185
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation (only IGBT)
I
F
FM
V
GE
V
ISOL
P
D
V
W
www.irf.com
1

40MT120UHAPBF Related Products

40MT120UHAPBF 40MT120UHTAPBF 40MT120UHTA
Description Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, MTP, 13 PIN
Is it lead-free? Lead free Lead free Contains lead
Is it Rohs certified? conform to conform to incompatible
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
package instruction FLANGE MOUNT, R-XUFM-X13 FLANGE MOUNT, R-XUFM-X13 FLANGE MOUNT, R-XUFM-X13
Contacts 13 13 13
Reach Compliance Code compliant compliant compliant
Shell connection ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 80 A 80 A 80 A
Collector-emitter maximum voltage 1200 V 1200 V 1200 V
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code R-XUFM-X13 R-XUFM-X13 R-XUFM-X13
Number of components 2 2 2
Number of terminals 13 13 13
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) 260 260 NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER
Maximum time at peak reflow temperature 40 40 NOT SPECIFIED
transistor applications POWER CONTROL POWER CONTROL POWER CONTROL
Transistor component materials SILICON SILICON SILICON
Maximum operating temperature - 150 °C 150 °C
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