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GMBT2222A

Description
NPN EPITAXIAL PLANAR TRANSISTOR
File Size281KB,4 Pages
ManufacturerETC
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GMBT2222A Overview

NPN EPITAXIAL PLANAR TRANSISTOR

CORPORATION
G M BT 2 2 2 2 A
Description
Features
&
frequency current gain
High
& High speed switching
& For complementary use with PNP type GMBT2907A
ISSUED DATE :2001/03/12
REVISED DATE :2005/06/27B
NPN E PITAX I AL PL ANAR T RANSI STOR
The GMBT2222A is designed for general purpose amplifier and high speed, medium-power switching applications.
Package Dimensions
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0C
10 C
Absolute Maximum Ratings at Ta = 25 :
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage at Ta=25 :
Collector to Emitter Voltage at Ta=25 :
Emitter to Base Voltage at Ta=25 :
Collector Current at Ta=25 :
Total Power Dissipation at Ta=25 :
Symbol
Tj
Tstg
VCBO
VCEO
VEBO
IC
PD
Ratings
+150
-55 ~ +150
75
40
6
600
225
V
V
V
mA
mW
Unit
Characteristics
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
*h
FE
5
fT
Cob
at Ta = 25 :
Min.
75
40
6
-
-
-
-
-
-
-
35
50
75
100
40
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
500
1.0
1.2
2.0
-
-
-
300
-
-
8
MHz
pF
Unit
V
V
V
nA
nA
nA
mV
V
V
V
IC=100uA , IE=0
IC=10mA, IB=0
IE=10uA, IC=0
VCB=60V, IE=0
VCE=60V ,VEB
(OFF)
=3V
VEB=3V, IC=0
IC=380mA, IB=10mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCB=20V, IC=20mA, f=100MHz
VCB=10V, IE=0, f=1MHz
* Pulse Test: Pulse Width
380 s, Duty Cycle
2%
Test Conditions
1/4

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