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FC694308ER

Description
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size344KB,7 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

FC694308ER Overview

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SSMINI6-F3-B, SC-107C, 6 PIN

FC694308ER Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.1 A
Maximum drain-source on-resistance1.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
Doc No.
TT4-EA-14570
Revision.
2
Product Standards
MOS FET
FC694308ER
FC694308ER
Dual N-channel MOSFET
For switching circuits
6
Unit : mm
1.6
0.2
0.13
4
Features
Low drive voltage : 2.5 V drive
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)
5
1
2
3
1.2
1.6
(0.6)
(0.5) (0.5)
1.0
Marking Symbol :
Basic Part Number
V9
Dual FK330308 (Individual)
Packaging
Embossed type (Thermo-compression sealing) : 8 000 pcs / reel (standard)
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Panasonic
JEITA
Code
SSMini6-F3-B
SC-107C
SOT-666
Absolute Maximum Ratings Ta = 25
C
Parameter
Drain to Source Voltage
FET1 Gate to Source Voltage
FET2 Drain Current
Drain Current (Pulsed)
*1
Total Power Dissipation
Overall Channel Temperature
Storage Temperature Range
Symbol
VDS
VGS
ID
IDp
PD
Tch
Tstg
Rating
30
20
100
200
125
150
-55 to +150
Unit
V
V
mA
mA
mW
C
C
Internal Connection
6
FET 1
5
4
Note *1 Pulse test: Ensure that the channel temperature does not exceed 150
C
FET 2
1
2
3
Pin Name
1. Source(FET1) 4. Source(FET2)
2. Gate(FET1) 5. Gate(FET2)
3. Drain(FET2) 6. Drain(FET1)
Page 1 of 6
Established : 2013-02-27
Revised
: 2013-08-06
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