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MX15KP120A/TR

Description
Trans Voltage Suppressor Diode, 15000W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, PLASTIC, CASE 5A, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size255KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MX15KP120A/TR Overview

Trans Voltage Suppressor Diode, 15000W, 120V V(RWM), Unidirectional, 1 Element, Silicon, DO-204AR, PLASTIC, CASE 5A, 2 PIN

MX15KP120A/TR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionR-PALF-W2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage133 V
Shell connectionISOLATED
Maximum clamping voltage193 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-204AR
JESD-30 codeR-PALF-W2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.56 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage120 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
15,000W Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Plastic encapsulated TVS series for Thru Hole mounting
- Selections for 22.0 to 280 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
M15KP22A thru M15KP280CA, e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
S
uppresses transients up to 15 kW @ 10/1000 µs and 100 kW @ 8/20 µs (see Figure 1)
Optional upscreening available by replacing M prefix with MA, MX or MXL prefixes. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS Compliant devices available by adding “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Fast response
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4: M15KP22A to M15KP280CA
o
Class 5: M15KP22A to M15KP280CA (short distance)
o
Class 5: M15KP22A to M15KP110CA (long distance)
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1 & 2: M15KP22A to M15KP280CA
o
Class 3: M15KP22A to M15KP240CA
o
Class 4: M15KP22A to M15KP120CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: M15KP22A to M15KP220CA
o
Class 3: M15KP22A to M15KP110CA
o
Class 4: M15KP22A to M15KP54CA
CASE 5A
(DO-204AR)
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with impulse
repetition rate (duty factor) of 0.05 % or less
t
clamping
(0 V to V
BR
min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 20 ºC/W junction to lead, or 80ºC/W junction to ambient when mounted on FR4 PC
board with 4 mm
2
copper pads (1oz) and track width 1 mm, length 25 mm
Steady-State Power dissipation: 6 watts at T
L
= 30
o
C, or 1.56 watts at T
A
= 25ºC when mounted on FR4 PC
board described for thermal resistance
Forward Surge: 200 Amps 8.3 ms half-sine wave for unidirectional devices only
Solder temperatures: 260 ºC for 10 s (maximum)
RF01011 Rev B, August 2010
High Reliability Product Group
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