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MA4P274-1225T_1

Description
IC,ATTENUATOR,TSOP,5PIN,PLASTIC
CategoryTopical application    Wireless rf/communication   
File Size669KB,12 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet Parametric View All

MA4P274-1225T_1 Overview

IC,ATTENUATOR,TSOP,5PIN,PLASTIC

MA4P274-1225T_1 Parametric

Parameter NameAttribute value
Number of terminals5
Minimum operating temperature-65 Cel
Maximum operating temperature125 Cel
stateTransferred
Packaging MaterialsPLASTIC/EPOXY
ckage_equivalence_codeTSOP5/6,.11,37
sub_categoryRF/Microwave Attenuators
Now Offering
RoHs Compliant
Equivalent Parts
Quad PIN Diode
π
Attenuator
5 –3000 MHz
Features
4 PIN Diodes in SOT-25 Plastic Package
Externally Selectable Bias and RF Match
Network
5 – 3,000 MHz Useable Frequency Band
+ 43 dBm IP3@ 1 GHz (
50
)
1.0 dB Loss @ 1 GHz (
50
)
30 dB Attenuation @ 1 GHz (
50
)
Lead-Free (RoHS Compliant) equivalent
available with 260 °C reflow compatibility
MA4P274-1225T/MA4P7455-1225T
V1
Package Outline
(Topview)
3
2
1
Topview
4
5
Description and Applications
M/A-COM's MA4P274-1225T/MA4P7455-1225T is a
wideband, lower insertion loss, high IP3, Quad PIN
Diode
π
Attenuator in a low-cost, surface mount
SOT-25 package. Four PIN Diodes in one package
reduce design parasitics and improve circuit density.
These
devices
are
offered
with
standard Sn/Pb plating, as well as with 100% matte
Sn plating on our RoHS compliant equivalent device.
These PIN Diode Attenuators perform well where RF
Signal Amplitude Control is required in 50
Handset Circuits and 75
Broadband CATV
Systems. Exceptional Insertion Loss, Attenuation
Range, and IP3 at <10 mA bias make these devices
suitable for better power level control in RF
Amplifiers.
Pin Configuration
PIN
1
2
3
Function
RF In
Series
Bias
RF Out
PIN
4
5
Function
Shunt 1 Bias
Shunt 2 Bias
Part Number
MA4P274 -1225
MA4P274 -1225T
RoHs Compliant Part Number
MA4P7455-1225
MA4P7455-1225T
Electrical Specifications @ +25 °C
Parameter
Ct @ 0 V
Rs @ 1 mA
Rs @ 10 mA
V
b
Minority Carrier
Lifetime
Power
Dissipation
Test Conditions
100 MHz
100 MHz
100 MHz
D.C.
( 50 % - 90 % ) Voltage
If = + 10mA, Ir = - 6mA Pulse
@ 100 kHz Sq Wave
D.C. and F = 5 – 3,000 MHz
Derate linearly to 0 mW at 125 C
Using 1,000 deg-C/W
Thermal Resistance
F = 5 – 3,000 MHz
Vshunt 1 & 2 Diode Bias = 0.75 V
Vseries Diode Bias = 0 to 20 V
Units
pF
V
nS
125
Min.
Typ.
0.45
13
2.3
150
1000
2000
Max.
0.50
18
3.0
mW
100
RF Incident Power
dBm
+ 20
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
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