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MAAPGM0042-DIE

Description
1.2W X/Ku-Band Power Amplifier 11.5-16.0 GHz
File Size421KB,6 Pages
ManufacturerMACOM
Websitehttp://www.macom.com
Download Datasheet View All

MAAPGM0042-DIE Overview

1.2W X/Ku-Band Power Amplifier 11.5-16.0 GHz

RO-P-DS-3037-
1.2W X/Ku-Band Power Amplifier
11.5-16.0 GHz
Preliminary Information
MAAPGM0042-DIE
Features
11.5-16.0 GHz GaAs MMIC Amplifier
11.5-16.0 GHz Operation
1.2 Watt Saturated Output Power Level
Variable Drain Voltage (4-10V) Operation
Self-Aligned MSAG
®
MESFET Process
Primary Applications
Point-to-Point Radio
SatCom
Radio Location
Description
The
MAAPGM0042-DIE
is a 3-stage 1.2 W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Each device is 100% RF tested on wafer to ensure performance
compliance. The part is fabricated using M/A-COM’s repeatable,
high performance and highly reliable GaAs Multifunction Self-
Aligned Gate (MSAG
®
) MESFET Process. This process features
silicon oxynitride passivation and polyimide scratch protection.
Electrical Characteristics: T
B
= 40°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, V
GG
= -2V, P
in
= 18 dBm
Parameter
Bandwidth
Output Power
Power Added Efficiency
1-dB Compression Point
Small Signal Gain
VSWR
Gate Current
Drain Current
Output Third Order Intercept
Noise Figure
2
nd
Harmonic
3
rd
Harmonic
Symbol
f
P
OUT
PAE
P1dB
G
VSWR
I
GG
I
DD
OTOI
NF
2f
3f
Typical
11.5-16.0
31
30
28
20
1.9:1
<5
< 600
35
10
-27
-35
mA
mA
dBm
dB
dBc
dBc
Units
GHz
dBm
%
dBm
dB
1. T
B
= MMIC Base Temperature
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