The AG402-86 consists of Darlington pair amplifiers using
the high reliability InGaP/GaAs HBT process technology
and only requires DC-blocking capacitors, a bias resistor,
and an inductive RF choke for operation.
The broadband MMIC amplifier can be directly applied to
various current and next generation wireless technologies
such as GPRS, GSM, CDMA, and W-CDMA. In addition,
the AG402-86 will work for other various applications
within the DC to 6 GHz frequency range such as CATV
and WiMAX.
Functional Diagram
GND
4
RF In
1
3
RF Out
2
GND
Applications
•
•
•
•
•
Mobile Infrastructure
CATV / FTTX
W-LAN / ISM
RFID
WiMAX / WiBro
Function
Input
Output/Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Output IP2
Noise Figure
Test Frequency
Gain
Output P1dB
Output IP3
(2)
Device Voltage
Device Current
Typical Performance
(1)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dBm
dB
MHz
dB
dBm
dBm
V
mA
Min
DC
Typ
900
15.0
18
25
+17.1
+32.6
+46
3.7
1900
14.3
+15.9
+29.6
4.91
60
Max
6000
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
Units
MHz
dB
dB
dB
dBm
dBm
dB
500
15.2
-16
-28
+17.1
+33.3
3.7
Typical
900
15.0
-18
-25
+17.1
+32.6
3.7
1900
14.3
-20
-16
+15.9
+29.6
3.9
2140
14.0
-20
-16
+15.3
+28.2
3.9
13.3
15.3
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, R
bias
= 18.2
Ω,
50
Ω
System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Voltage
RF Input Power (continuous)
Junction Temperature
-40 to +85
°C
-55 to +125
°C
+5 V
+10 dBm
+250
°C
Rating
Ordering Information
Part No.
AG402-86G
AG402-86PCB
Description
InGaP HBT Gain Block
(lead-free/green/RoHS-compliant SOT-86 Package)
700 – 2400 MHz Fully Assembled Eval. Board
Specifications and information are subject to change without notice
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 1 of 5 September 2006
AG402-86
InGaP HBT Gain Block
Frequency
S21
S11
S22
Output P1dB
Output IP3
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
100
15.3
-18
-23
+17.1
+33.6
3.7
500
15.2
-16
-28
+17.1
+33.3
3.7
900
15.0
-18
-25
+17.1
+32.6
3.7
1900
14.3
-20
-16
+15.9
+29.6
3.9
2140
14.0
-20
-16
+15.3
+28.2
3.9
The Communications Edge
TM
Product Information
Typical Device RF Performance
Supply Bias = 6 V, R
bias
= 18.2
Ω,
I
cc
= 60 mA
2400
13.8
-20
-16
+14.7
+27.3
4.0
3500
13.0
-20
-17
+11.9
4.0
5800
10.7
-16
-13
1. Test conditions: T = 25 ºC, Supply Voltage = +6 V, Device Voltage = 4.91 V, Rbias = 18.2
Ω,
Icc = 60 mA typical, 50
Ω
System.
2. 3OIP measured with two tones at an output power of 0 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Data is shown as device performance only. Actual implementation for the desired frequency band will be determined by external components shown in the application circuit.
Gain vs. Frequency
16
14
Return Loss
0
Device Current (mA)
I-V Curve
100
80
Optimal operating point
60
40
20
0
3.0
12
10
8
-40 C
6
0
1
2
Frequency (GHz)
3
4
+25 C
+85 C
S11, S22 (dB)
-10
-20
-30
S11
S22
G a in (d B )
-40
0
1
2
3
4
5
6
3.4
3.8
4.2
4.6
5.0
5.4
Frequency (GHz)
Output IP2 vs. Frequency
Device Voltage (V)
Noise Figure vs. Frequency
Output IP3 vs. Frequency
40
35
30
25
-40 C
+25 C
+85 C
50
45
5
4
NF (dB)
-40c
+25c
+85c
OIP3 (dBm)
OIP2 (dBm)
3
2
1
-40 C
+25 C
+85 C
40
35
30
20
0
0
200
400
600
800
1000
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
P1dB vs. Frequency
Frequency (MHz)
Output Power / Gain vs. Input Power
16
14
G a in (d B )
12
10
8
Output Power
6
0
-12
-8
-4
0
Input Power (dBm)
4
8
4
-12
-8
Gain
frequency = 900 MHz
Frequency (GHz)
Output Power / Gain vs. Input Power
20
O u tp u t P ow e r (d B m )
G a in (d B )
16
12
8
4
14
12
10
8
6
Output Power
0
-4
0
Input Power (dBm)
4
8
Gain
frequency = 2000 MHz
20
15
10
5
-40 C
+25 C
+85 C
20
O u tp u t P ow e r (d B m )
16
12
8
4
P1dB (dBm)
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 2 of 5 September 2006
AG402-86
InGaP HBT Gain Block
Gain vs. Frequency
16
14
12
10
8
-40 C
6
0
1
2
Frequency (GHz)
3
4
+25 C
+85 C
Output IP3 vs. Frequency
The Communications Edge
TM
Product Information
Typical Device RF Performance (cont’d)
Supply Bias = +8 V, R
bias
= 51
Ω,
I
cc
= 60 mA
Output IP2 vs. Frequency
40
35
30
25
-40 C
+25 C
+85 C
50
45
40
35
-40c
+25c
+85c
OIP3 (dBm)
20
OIP2 (dBm)
G a in (d B )
30
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800
1000
Frequency (GHz)
P1dB vs. Frequency
Noise Figure vs. Frequency
Frequency (MHz)
20
15
NF (dB)
-40 C
+25 C
+85 C
5
4
3
2
1
-40 C
+25 C
+85 C
P1dB (dBm)
10
5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
0
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 3 of 5 September 2006
AG402-86
InGaP HBT Gain Block
Vcc
Icc = 60 mA
The Communications Edge
TM
Product Information
Application Circuit
R1
Bias
Resistor
C4
Bypass
Capacitor
C3
0.018 µF
L1
RF Choke
RF IN
AG402-86
C1
Blocking
Capacitor
C2
Blocking
Capacitor
RF OUT
Recommended Component Values
Reference
Designator
50
500
L1
820 nH
220 nH
C1, C2, C4
.018 µF
1000 pF
Ref. Desig.
L1
C1, C2
C3
C4
R1
Frequency (MHz)
900
1900
2200
68 nH
27 nH
22 nH
100 pF
68 pF
68 pF
Size
0603
0603
0603
0805
2500
18 nH
56 pF
3500
15 nH
39 pF
1. The proper values for the components are dependent upon the intended frequency of operation.
2. The following values are contained on the evaluation board to achieve optimal broadband performance:
Value / Type
39 nH wirewound inductor
56 pF chip capacitor
0.018
μF
chip capacitor
Do Not Place
18.2
Ω
1% tolerance
Recommended Bias Resistor Values
S upply
R1 value
S ize
Voltage
6V
18.2 ohms
0805
7V
34.8 ohms
1206
8V
52 ohms
1210
9V
68 ohms
1210
10 V
85 ohms
2010
12 V
118 ohms
2010
The proper value for R1 is dependent upon the supply
voltage and allows for bias stability over temperature.
WJ recommends a minimum supply bias of +6 V. A
1% tolerance resistor is recommended.
Typical Device Data
S-Parameters (V
device
= +4.91 V, I
CC
= 60 mA, T = 25
°C,
calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
3250
3500
3750
4000
4250
4500
4750
5000
5250
5500
5750
6000
-18.19
-18.50
-16.83
-16.93
-17.66
-17.80
-18.49
-19.36
-19.88
-17.54
-18.15
-18.49
-18.96
-19.69
-20.80
-20.99
-21.07
-20.87
-20.80
-21.92
-22.58
-22.05
-19.90
-17.07
-15.48
-178.44
172.11
160.36
150.10
135.70
124.01
111.33
93.71
73.63
42.35
32.29
22.73
14.87
12.18
12.27
20.01
26.72
29.41
27.12
17.87
0.08
-37.48
-63.66
-80.82
-86.40
15.53
15.46
15.41
15.31
15.18
15.03
14.86
14.64
14.41
14.14
13.97
13.75
13.55
13.38
13.17
12.92
12.71
12.46
12.14
11.90
11.65
11.40
11.13
10.94
10.72
178.09
170.57
161.13
151.87
142.96
133.59
124.89
115.83
107.28
99.30
93.15
84.76
76.71
68.83
60.87
52.76
44.77
36.89
29.16
21.23
13.76
6.73
0.09
-6.84
-13.81
-19.37
-19.88
-20.13
-19.77
-20.35
-19.93
-19.99
-20.01
-20.03
-19.84
-20.39
-19.93
-20.04
-19.84
-19.89
-19.54
-19.72
-19.46
-19.50
-19.34
-19.07
-19.30
-18.94
-18.91
-18.78
0.13
-1.29
-5.19
-8.78
-14.22
-12.91
-15.83
-17.99
-21.53
-23.22
-26.91
-29.92
-29.06
-30.33
-33.64
-37.44
-40.93
-42.87
-46.46
-49.19
-52.55
-55.41
-57.71
-60.05
-63.88
-23.23
-23.53
-28.54
-26.58
-24.03
-20.82
-18.77
-16.93
-15.62
-13.24
-13.48
-13.77
-14.53
-15.91
-17.66
-18.43
-17.52
-15.52
-14.30
-13.30
-12.69
-12.63
-12.78
-13.03
-13.37
-7.45
-14.54
-47.63
-80.04
-97.40
-109.10
-116.78
-119.93
-123.85
-114.57
-119.97
-125.08
-133.10
-142.86
-160.49
169.33
144.79
128.38
119.24
117.02
119.14
122.44
128.57
135.45
138.40
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6621
•
e-mail: sales@wj.com
•
Web site: www.wj.com
Page 4 of 5 September 2006
AG402-86
InGaP HBT Gain Block
The Communications Edge
TM
Product Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260
°C
reflow temperature) and leaded
(maximum 245
°C
reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
AG402-86G (Green / Lead-free Sot-86 Package) Mechanical Information
Outline Drawing
Product Marking
The component will be marked with a “Y”
designator followed by a two-digit numeric lot
code on the top surface of the package. The
obsolete tin-lead package is marked with an
“F” designator followed by a two-digit numeric
lot code.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
MSL / ESD Rating
ESD Rating:
Value:
Test:
Standard:
Class 1C
Passes
≥
1000V min.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes
≥
1000V min.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Land Pattern
ESD Rating:
Value:
Test:
Standard:
MSL Rating: Level 3 at +260
°C
convection reflow
Standard:
JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper
performance of this device. Vias should use a .35mm
(#80 / .0135”) diameter drill and have a final plated thru
diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers
near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the
board to a heatsink. Ensure that the ground / thermal via
region contacts the heatsink.
4. Do not put solder mask on the backside of the PC board in
the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and
construction.
6. Use 1 oz. Copper minimum.
7. All dimensions are in millimeters (inches). Angles are in
degrees.
Thermal Specifications
Parameter
Operating Case Temperature
Thermal Resistance, Rth
(1)
Junction Temperature, Tj
(2)
M T vs. G DL T p re
TF
N ead em eratu
1000
-40 to +85
°C
216
°C
/ W
149
°C
MTTF (million hrs)
Rating
100
10
1. The thermal resistance is referenced from the hottest
part of the junction to the ground lead (pin 2 or 4).
2. This corresponds to the typical biasing condition of
+4.91V, 60 mA at an 85
°C
case temperature. A
minimum MTTF of 1 million hours is achieved for
junction temperatures below 177
°C.
1
60
70
80
90
100
110
120
G u dL T p re(°C
ro n ead em eratu
)
Specifications and information are subject to change without notice
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