APM2007
N-Channel Enhancement Mode MOSFET
Features
•
20V/30A , R
DS(ON)
=6mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=8mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=16mΩ(typ.) @ V
GS
=2.5V
Pin Description
•
•
•
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
TO-252 Package
1
2
3
G
D
S
Top View of TO-252
D
Applications
•
Power Management in Computer, Portable
Equipment and Battery Powered Systems.
G
Ordering and Marking Information
APM2007N
Handling Code
Temp. Range
Package Code
S
N-Channel MOSFET
Package Code
U : TO-252
Operation Junction Temp. Range
C :-55 to 150
°
C
Handling Code
TR : Tape & Reel
APM2007N U :
APM2007N
XXXXX
XXXXX - Date Code
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
(T
A
= 25°C unless otherwise noted)
Rating
20
±16
V
Unit
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
1
www.anpec.com.tw
APM2007
Absolute Maximum Ratings (Cont.)
Symbol
I
D*
I
DM
P
D
T
J
T
STG
R
θjA
Parameter
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
T
A
=25°C
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance – Junction to Ambient
T
A
=100°C
(T
A
= 25°C unless otherwise noted)
Rating
30
70
50
W
10
150
-55 to 150
50
°C
°C
°C/W
A
Unit
* Surface Mounted on FR4 Board, t
≤
10 sec.
Electrical Characteristics
Symbol
Static
BV
D SS
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
a
V
SD
a
b
(T
A
= 25°C unless otherwise noted)
APM 2007N
Min.
Typ.
Max.
Param eter
Test Condition
Unit
Drain-Source Breakdown
Voltage
Zero G ate Voltage Drain
Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source On-state
Resistance
Diode Forward Voltage
V
GS
=0V , I
D S
=250µA
V
DS
=18V , V
GS
=0V
V
DS
=V
G S
, I
D S
=250µA
V
GS
=±16V , V
DS
=0V
V
GS
=10V , I
DS
=30A
V
GS
=4.5V , I
DS
=20A
V
GS
=2.5V , I
DS
=15A
I
SD
=4A , V
G S
=0V
V
DS
=10V , I
DS
= 5A
V
GS
=4.5V ,
20
1
1
1.5
6
8
16
0.7
28
5.2
7.6
17
2
±100
7.5
9.5
18
1.3
35
V
µA
V
nA
m
Ω
V
Dynam ic
Q
g
Total G ate Charge
Q
gs
Gate-Source Charge
Q
gd
t
d(ON)
T
r
t
d(OFF)
T
f
C
iss
C
oss
C
rss
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Tim e
Turn-off Delay Tim e
Turn-off Fall Time
Input Capacitance
nC
32
29
56
32
pF
ns
V
DD
=10V , I
D S
=1A ,
V
GEN
=4.5V , R
G
=0.2Ω
V
GS
=0V
15
45
25
2293
570
390
Output Capacitance
V
DS
=15V
Reverse Transfer Capacitance Frequency=1.0MHz
Notes
a
b
: Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%
: Guaranteed by design, not subject to production testing
2
www.anpec.com.tw
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
APM2007
Typical Characteristics
Output Characteristics
30
V
GS
=3,4,5,6,7,8,9,10V
Transfer Characteristics
30
25
25
I
D
-Drain Current (A)
I
D-
Drain Current (A)
20
15
10
5
0
20
15
10
T
J
=125°C
V
GS
=2V
5
0
0.0
T
J
=25°C
T
J
=-55°C
0
2
4
6
8
10
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.50
I
DS
=250uA
On-Resistance vs. Drain Current
16
V
GS(th)-
Threshold Voltage (V)
(Normalized)
1.25
1.00
0.75
0.50
0.25
0.00
-50
R
DS(ON)
-On-Resistance (Ω)
14
12
10
8
6
4
2
V
GS
=4.5V
V
GS
=10V
-25
0
25
50
75
100 125 150
0
0
10
20
30
40
50
60
70
Tj - Junction Temperature (°C)
I
D
- Drain Current (A)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
3
www.anpec.com.tw
APM2007
Typical Characteristics
On-Resistance vs. Gate-to-Source Voltage
0.020
0.018
I
D
=30A
On-Resistance vs. Junction Temperature
1.8
V
GS
=4.5V
I
D
=20A
R
DS(ON)
-On-Resistance (Ω)
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
1
2
3
4
5
6
7
8
9
10
R
DS(ON)
-On-Resistance (Ω)
(Normalized)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
100 125 150
V
GS
- Gate-to-Source Voltage (V)
T
J
- Junction Temperature (°C)
Gate Charge
5
V
DS
=10V
I
D
=5A
Capacitance
4000
3500
Frequency=1MHz
V
GS
-Gate-Source Voltage (V)
4
Capacitance (pF)
3000
2500
2000
1500
1000
500
Coss
Crss
Ciss
3
2
1
0
0
5
10
15
20
25
30
35
0
0
5
10
15
20
Q
G
- Gate Charge (nC)
V
DS
- Drain-to-Source Voltage (V)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
4
www.anpec.com.tw
APM2007
Typical Characteristics
Source-Drain Diode Forward Voltage
30
10
250
Single Pulse Power
I
S
-Source Current (A)
200
Power (W)
1.0
1.2
150
1
T
J
=150°C
T
J
=25°C
100
0.1
50
0.0
0.2
0.4
0.6
0.8
0
1E-3
0.01
0.1
1
10
100
1000
V
SD
-Source-to-Drain Voltage (V)
Time (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle=0.5
D=0.2
D=0.1
D=0.05
0.1
D=0.02
D=0.01
SINGLE PULSE
1.Duty Cycle, D=t1/t2
2.Per Unit Base=R
thJA
=50°C/W
3.T
JM
-T
A
=P
DM
Z
thJA
0.01
1E-4
1E-3
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. A.1 - Nov., 2002
5
www.anpec.com.tw
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