FH101
High Dynamic Range FET
Product Features
x
x
x
x
x
x
x
50 – 4000 MHz
Low Noise Figure
18 dB Gain
+36 dBm OIP3
+18 dBm P1dB
Single or Dual Supply Operation
Lead-free/Green/RoHS-compliant
SOT-89 Package
x
MTTF > 100 years
Product Description
The FH101 is a high dynamic range FET packaged in a
low-cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The device combines dependable performance with superb
quality to maintain MTTF values exceeding 100 years at
mounting temperatures of +85qC. The FH101 is available
in the environmentally-friendly lead-free/green/RoHS-
compliant SOT-89 package.
The device utilizes a high reliability GaAs MESFET
technology and is targeted for applications where high
linearity is required. It is well suited for various current
and next generation wireless technologies such as GPRS,
GSM, CDMA, and W-CDMA. In addition, the FH101 will
work for other applications within the 50 to 4000 MHz
frequency range such as fixed wireless.
Functional Diagram
4
1
2
3
Function
Gate
Drain
Source
Pin No.
1
3
2, 4
Applications
x
x
x
x
Mobile Infrastructure
CATV / DBS
W-LAN / ISM
Defense / Homeland Security
Specifications
(1)
DC Electrical Parameter
Saturated Drain Current, Idss
Transconductance, Gm
Pinch-off Voltage, Vp
(3)
(2)
Typical Performance
(6)
Units Min
mA
mS
V
100
-3
Typ
140
120
-1.5
Max
170
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Gate Voltage
Units
MHz
dB
dB
dB
dBm
dBm
dB
V
900
19
-11
-10
+18.8
+36
2.7
Typical
1960
2140
16.5
16.5
-20
-22
-9
-9
+18.1
+19.1
+36
+36
3.1
3.0
5V @ 140mA
0
RF Parameter
Operational Bandwidth
Test Frequency
Small-signal Gain, Gss
Max Stable Gain, Gmsg
Output IP3
(4)
P1dB
Minimum Noise Figure
(5)
Drain Bias
Gate Bias
Units Min
MHz
MHz
dB
dB
dBm
dBm
dB
V
V
Typ
Max
50 – 4000
800
17
18
23
+32
+36
+18
0.77
+5
0
6. The device requires appropriate matching to become unconditionally stable. Parameters reflect
performance in an appropriate application circuit.
1. DC and RF parameters are measured under the following conditions unless otherwise noted:
25 C with Vds = 5V, Vgs = 0V, in a 50 system.
2. Idss is measured with Vgs = 0V.
3. Pinch-off voltage is measured with Ids = 0.6 mA.
4. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
5. The minimum noise figure has
.
S
=
.
L
=
.
OPT
.
q
:
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Drain to Source Voltage
Gate to Source Voltage
Gate Current
RF Input Power (continuous)
Junction Temperature
-40 to +85
qC
-55 to +150
qC
+7 V
-6 V
4.5 mA
4 dB above Input P1dB
+220
qC
Rating
Ordering Information
Part No.
FH101-G
Description
High Dynamic Range FET
(lead-free/green/RoHS-compliant SOT-89 package)
Specifications and information are subject to change without notice.
Operation of this device above any of these parameters may cause permanent damage.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 1 of 7 April 2007
FH101
High Dynamic Range FET
Typical Device Data
Data is shown at a biasing configuration of V
DS
= +5 V, I
DS
= 140 mA, 25
q
C for the unmatched device in a 50 ohm system)
1.0
24
0
3.
S21 and MSG (dB)
0
4.
0.2
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
16
0
5.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
0
0
10.0
18
12
0
1
Frequency (GHz)
2
3
.4
-0
.4
-0
-0
.6
-0
.6
Swp Min
0.01GHz
-0.8
-0.8
.0
-2
.0
-2
Swp Min
0.01GHz
Notes:
The gain for the unmatched device in 50 ohm system is shown as the trace in blue color. For a tuned circuit for a particular frequency, it
is expected that actual gain will be higher, as high as the maximum stable gain. The maximum stable gain is shown in the red line. The
impedance plots are shown from 10 – 6000 MHz, with markers placed at 0.5 – 6.0 GHz in 0.5 GHz increments.
Output IP3 vs. Temperature
Output IP3 vs. Output Power
Noise Figure vs. Frequency
45
40
35
30
5V 100% Idss
45
Noise Figure (dB)
2.5
NF (unmatched device)
OIP3 (dBm)
OIP3 (dBm)
40
35
30
5V 100% Idss
2
1.5
1
0.5
0
Minimum NF
25
-40
-15
10
35
60
85
Temperature (
q
C)
25
0
2
4
6
8
10
12
Output Power per tone (dBm)
0.5
1
-1.0
-1.0
1.5
2
Frequency (GHz)
S-Parameters (V
D
= +5 V, I
D
= 140 mA, V
G
= 0 V, 25
q
C, calibrated to device leads)
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
50
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
3000
0.00
-0.13
-0.34
-0.55
-0.83
-1.16
-1.50
-1.80
-2.03
-2.25
-2.37
-2.55
-2.62
-4.08
-19.64
-39.41
-58.33
-75.93
-93.29
-110.36
-125.64
-140.92
-155.64
-169.80
177.26
165.93
19.36
19.19
18.85
18.47
17.95
17.47
16.82
16.21
15.65
15.05
14.42
13.74
13.18
176.06
164.65
150.19
136.21
123.24
110.92
99.18
88.19
77.53
67.15
57.62
48.11
39.86
-51.05
-37.15
-31.34
-28.24
-26.22
-24.88
-23.95
-23.27
-22.81
-22.39
-22.25
-22.08
-22.01
87.96
78.37
66.75
55.74
45.25
35.22
26.69
18.17
9.87
2.11
-4.68
-11.35
-17.16
-4.38
-4.52
-4.77
-5.19
-5.77
-6.44
-7.14
-7.94
-8.84
-9.57
-10.43
-11.43
-12.30
-3.34
-11.51
-22.43
-33.05
-43.46
-53.09
-61.08
-69.92
-78.43
-86.41
-93.92
-101.88
-108.95
Noise Parameters (V
D
= +5 V, I
D
= 140 mA, V
G
= 0 V, 25
q
C, calibrated to device leads)
Freq (MHz)
NF,min (dB)
MagOpt (mag)
AngOpt (deg)
Rn
700
800
900
1000
1100
1200
1300
1400
0.51
0.77
0.66
0.74
0.85
0.85
0.95
1.07
0.574
0.535
0.508
0.488
0.463
0.458
0.446
0.450
32.8
37.4
44.1
50.4
56.4
62.0
67.3
73.3
0.403
0.409
0.379
0.365
0.357
0.345
0.335
0.323
Device S-parameters and noise are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 2 of 7 April 2007
-5.
-4
.0
-3
.0
-5.
-4
.0
0
14
-0.
2
-0.
2
-10.0
-10.0
-3
.0
0.2
20
5.0
10.0
0.
4
0.
4
22
DB(GMax())
2.
0
2.
0
DB(|S(2,1)|)
6
0.
6
0.
Swp Max
6GHz
1.0
0.8
0.8
Gain and Max. Stable Gain
S11
S22
Swp Max
6GHz
0
3.
0
4.
5.0
10.0
FH101
High Dynamic Range FET
Reference Design: 35 MHz, 17 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
ID=R6
R=390 Ohm
Gain (dB)
16
-10
15
-15
4.0
3.2
14
-20
13
25
30
35
Frequency (MHz)
40
45
-25
ID=C6
C=1000 pF
ID=R7
R=390 Ohm
+5V
ID=C3
C=1000 pF
FH101
NET="FH1"
ID=C1
R=3.9 Ohm
ID=R1
C=68 pF
1
2
ID=L1
L=470 nH
ID=C2
C=1000 pF
ID=R8
L=390 nH
Notes:
1.
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2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 170 MHz, 14 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
ID=R6
R=240 Ohm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
13
-20
2.7
2.7
12
-30
11
0.12
0.14
0.16
0.18
Frequency (GHz)
0.2
0.22
-40
ID=C6
ID=R7
C=1000 pF R=240 Ohm
+5V
ID=C3
C=1000 pF
FH101
NET="FH1"
ID=R1
C=24 pF
1
2
ID=L1
L=220 nH
ID=R2
R=4 Ohm
ID=R8
L=82 nH
ID=C2
C=1000 pF
Notes:
1.
Circuit Board Material: .014” Getek ML200DSS
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2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 3 of 7 April 2007
S11, S22 (dB)
Gain (dB)
160
14.1
-25
-21
170
14.2
-33
-23
+18.6
+36
2.7
+5
140
180
14.3
-28
-26
Gain / Return Loss (dB)
15
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
0
14
-10
S11, S22 (dB)
30
16.6
-19
-21
35
16.8
-20
-16
+18
+34
3.4
+5
140
40
16.8
-13
-14
Gain / Return Loss
18
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
0
17
-5
FH101
High Dynamic Range FET
Reference Design: 260 MHz, 25 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
250
25.2
-23
-12
260
25.1
-22
-14
+19.4
+34.5
1.9
+5
140
270
24.9
-13
-17
Gain / Return Loss
26
0
25
-5
S11, S22 (dB)
S11, S22 (dB)
Gain (dB)
24
-10
23
-15
1.8
2.1
22
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
-20
21
0.2
ID=C3
C=1.8e4 pF
-25
0.22
0.24
0.26
Frequency (GHz)
0.28
0.3
+5V
ID=C6
ID=R7
C=1000 pF R=2000 Ohm
ID=R6
R=2000 Ohm
FH101
NET="FH1"
2
ID=L1
L=220 nH
ID=C1
C=1000 pF
ID=R1
L=120 nH
1
ID=C2
C=1000 pF
ID=C5
R=1e4 Ohm
C=0.2 pF
R=3.3 Ohm
Notes:
1.
Circuit Board Material: .0
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2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 460 MHz, 20 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
ID=R6
R=750 Ohm
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
ID=C6
C=1000 pF
Gain (dB)
450
19.9
-24
-16
1.95
460
19.9
-24
-15
+18.6
+36
2.08
+5
140
470
19.9
-21
-15
Gain / Return Loss
21
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
0
20
-5
19
-10
18
-15
2.17
17
-20
16
0.34
0.38
0.42
0.46
0.5
Frequency (GHz)
0.54
0.58
-25
ID=R7
+5V
R=750 Ohm
ID=C3
C=1000 pF
FH101
NET="FH1"
ID=C1
C=1000 pF
ID=R1
L=36 nH
1
2
ID=L1
L=100 nH
ID=R2
L=10 nH
ID=C5
R=5000 Ohm
ID=C2
C=1000 pF
Notes:
1.
Circuit Board Material: .0
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2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 4 of 7 April 2007
FH101
High Dynamic Range FET
Reference Design: 790 MHz, 19 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Supply Voltage
Supply Current
GHz
dB
dB
dB
dBm
dBm
dB
V
mA
746
19.2
-20
-22
790
19.4
-28
-23
+19
+36
2.3
+5
140
+5V
ID=C4
C=1e4 pF
ID=C6
C=100 pF
ID=R7
R=560 Ohm
ID=C3
C=100 pF
18.5
18
17.5
17
0.7
0.75
0.8
Frequency (GHz)
0.85
0.9
-15
-20
-25
-30
ID=R6
R=560 Ohm
ID=C1
C=100 pF
1
FH101
NET="FH1"
2
ID=L1
L=27 nH
ID=R1
L=8.2 nH
ID=C5
L=10 nH
ID=R2
L=2.2 nH
ID=C2
C=100 pF
Notes:
1.
Circuit Board Material: .0
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2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Reference Design: 790 MHz, 17 dB Gain
Frequency
Gain
S11
S22
P1dB
OIP3
Noise Figure
Voltage
Current
GHz
dB
dB
dB
dBm
dBm
dB
V
mA
746
17.3
-19
-22
790
17.4
-19
-22
+19
+36
2.1
+5
140
835
17.4
-16
-21
Gain / Return Loss
19
0
Noise Figure vs. Frequency
4
25 °C
50 °C
90 °C
DB(|S(1,1)|) (R)
18
DB(|S(2,1)|) (L)
DB(|S(2,2)|) (R)
-5
S 11, S22 (dB )
3
NF (dB)
G ain (dB)
17
-10
2
1
0
740
16
-15
2.0
2.2
15
-20
14
0.7
+5V
-25
0.75
ID=C4
C=10000 pF
760
780
800
S11, S22 (dB)
Gain (dB)
835
19.3
-15
-22
Gain / Return Loss
20
19.5
19
DB(|S(2,1)|) (L)
DB(|S(1,1)|) (R)
DB(|S(2,2)|) (R)
0
-5
-10
820
840
0.8
Frequency (GHz)
0.85
0.9
Frequency (MHz)
ID=C6
ID=R7
C=100 pF R=360 Ohm
ID=R6
R=360 Ohm
ID=C3
C=100 pF
FH101
NET="FH1"
ID=R1
L=12 nH
1
2
ID=L1
L=33 nH
ID=C2
C=100 pF
ID=C1
C=100 pF
ID=C5
R=10000 Ohm
Notes:
1.
Circuit Board Material: .0
#´ÃBrrxÃHG!9TTÃ
Ã2Ã#!Ã ÃÃpr
ÃÃUurÃhvÃvp
vÃyvrÃuhÃhÃyvrÃvrqhprÃsÃ$Ã
2.
Components not shown in the schematic are either not used or loaded with a thru. Gain for the circuit can be adjusted slightly with the modification of the feedback resistance.
Specifications and information are subject to change without notice.
WJ Communications, Inc
x
Phone 1-800-WJ1-4401
x
FAX: 408-577-6621
x
e-mail: sales@wj.com
x
Web site: www.wj.com
Page 5 of 7 April 2007
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