EEWORLDEEWORLDEEWORLD

Part Number

Search

SSTA13

Description
NPN small signal transistor
CategoryDiscrete semiconductor    The transistor   
File Size36KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

SSTA13 Overview

NPN small signal transistor

SSTA13 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-based maximum capacity10 pF
Collector-emitter maximum voltage30 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)125 MHz
VCEsat-Max1.5 V
SSTA13
Transistors
NPN small signal transistor
SSTA13
Features
1) High Current Gain.
Dimensions
(Unit : mm)
SSTA13
Packaging specifications
(3)
2.9
0.4
0.95
0.45
Type
SSTA13
Code
Basic ordering unit (pieces)
T116
3000
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
1.3
2.4
Package
Taping
0.15
Each lead has same dimensions
Abbreviated symbol : RIM
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
30
10
0.3
0.2
150
−55
to 125
Unit
V
V
V
A
W
°C
°C
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Min.
30
30
10
5000
DC current transfer ratio
Transition frequency
Collector output capacitance
Pulsed
h
FE
10000
f
T
Cob
125
Typ.
5.4
Max.
0.1
0.1
1.5
2.0
Unit
V
V
V
I
C
=
100
µ
A
I
C
=
10
µ
A
I
E
=
10
µ
A
V
CB
=
30V
V
EB
=
10V
I
C
/I
B
=
100mA/ 0.1mA
V
CE
=
5V, I
C
=
100mA
V
CE
=
5V, I
C
=
10mA
V
CE
=
5V, I
C
=
100mA
Conditions
Collector-emitter breakdown voltage BV
CES
Collector-emitter breakdown voltage BV
CEO
Emitter-base breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
Collector-emitter saturation voltage
Base-emitter voltage
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
µ
A
µ
A
V
V
MHz
pF
V
CE
=
5V, I
E
=
10mA, f=100MHz
V
CB
=
10V, f=100kHz, I
E
=0
0.2Min.
1/1

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 487  2348  601  31  1681  10  48  13  1  34 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号