SMD Efficient Fast Recovery Rectifier
CFRA151-G Thru CFRA157-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0.
Fast recovery time: 150 ~ 500nS
Low leakage current
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
DO-214AC (SMA)
Mechanical Data:
Case: SMA/DO-214AC molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Mounting position: Any
Approx. Weight: 0.04 gram
0.180(4.57)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
0.209(5.31)
0.185(4.70)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics:
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
Max. Average Forward Current
Max. Instantaneous Forward Voltage
at 1.0A
Reverse recovery time
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25
o
C
Ta=100
o
C
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
Symbol
CFRA
151-G
50
50
35
CFRA
152-G
100
100
70
CFRA
153-G
200
200
140
CFRA
154-G
400
400
280
CFRA
155-G
600
600
420
CFRA
156-G
800
800
560
CFRA
157-G
1000
1000
700
Unit
V
V
V
V
RRM
V
DC
V
RMS
I
FSM
I
o
V
F
T
rr
I
R
R
JL
50
A
1.5
1.3
100
250
500
A
V
nS
uA
o
C/W
o
o
5.0
50
53
-55 to +155
-55 to +150
T
j
T
STG
C
C
Note1: Thermal resistance from junction to ambient.
“
-G
”
suffix designates RoHS compliant Version
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Page1
SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CFRA151-G thru CFRA157-G)
Fig. 1 - Reverse Characteristics
1000
100
Fig.2 - Forward Characteristics
Reverse Current ( uA )
Forward current ( A )
100
Tj=125 C
10
10
1
1.0
Tj=25 C
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
0.1
0
0.01
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage(V)
Fig. 3 - Junction Capacitance
140
120
Junction Capacitance (pF)
Fig. 4 - Non Repetitive Forward Surge Current
50
Peak Surge Forward Current (A)
8.3mS Single Half Sine
Wave JEDEC methode
100
80
60
40
20
0
0.1
Tj=25 C
f=1.0MHz
Vsig=50mV p-p
40
30
20
Tj=25 C
10
0
1.0
10
100
1000
1
5
10
50
1 00
Reverse Voltage (V)
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
Fig. 6 - Current Derating Curve
2.1
Average Forward Current ( A )
trr
|
|
|
|
|
|
|
|
1.8
1.5
1.2
0.9
0.6
0.3
00
(+)
25Vdc
(approx.)
( )
1
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
-0.25A
Single Phase
Half Wave 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
25
50
75
100
125
150
175
Ambient Temperature ( C)
“
-G
”
suffix designates RoHS compliant Version
www.comchiptech.com
Page2
Embedded System
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