Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 2.0 Amp
Features:
Diffused Junction
Low Forward Voltage Drop
High Reliability
High Current Capability
High Surge Current Capability
Ideal for Printed Circuit Boards
H
J
D
E
I
G
B
+ ~ ~ -
A
C
KBP
Min.
Max
Dim
14.22
15.24
A
B
11.68
10.67
C
11.68
12.70
D
4.57
5.08
3.60
4.10
E
2.16
2.67
G
12.70
-
H
0.88
0.76
J
1.52
I
All Dimension in mm
KBP
Mechanical Data:
Case: Molded Plastic
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
Weight: 1.7 grams (approx.)
Mounting position: Any
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note1) @ T
A
= 50ºC
Symbol
KBP
200-G
KBP
201-G
KBP
202-G
KBP
KBP
KBP
KBP
204-G 206-G 208-G 2010-G
UNIT
V
RRM
V
RWM
V
R
V
R
(RMS)
I
o
35
70
140
280
2.0
420
560
700
V
A
50
100
200
400
600
800
1000
V
Non-Repetitive Peak Forward Surge Current 8.3ms Single
I
FSM
half-sine-wave superimposed on rated load (JEDEC
Method)
Forward Voltage (per element) @ I
F
=2.0A
Peak Reverse Current @ T
A
=25ºC
At Rated DC Blocking Voltage @ T
A
=100ºC
Rating for Fusing (t<8.3ms)
Typical Thermal Resistance (Note3)
Operating and Storage Temperature Range
Typical Junction Capacitance per element (Note2)
Note:
60
A
V
FM
I
RM
I
2
t
R
θJA
T
J
, T
STG
C
J
1.1
10
500
15
30
-55 to +160
25
V
uA
A2S
K/W
ºC
pF
1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance junction to ambient mounted on PC board with 12mm
2
copper pad.
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation
.
Tel:510-657-8671
.
Fax: 510-657-8921
.
www.comchiptech.com
Page1
Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
2.0
10
T
J
= 150ºC
1.0
T
J
= 25ºC
1.5
1.0
Io, Instantaneous Fwd Current (A)
Io, Average Rectified Current (A)
0.5
0.1
0
0
75
150
T, Temperature (ºC)
Flg1. Forward Current Derating Curve
225
Pulse Width
=300 uS
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
, Instantaneous Fwd Voltage (V)
Flg2. Typical Fwd Characteristics
100
T
J
=150ºC
Single Half
Sine Wave
(JEDEC Nethod)
I
J
, Junction Capacitance (pF)
100
T
J
=25ºC
80
I
FSM
, Peak Fwd Surge Current (A)
60
10
40
20
0
1
10
Number of Cycles At 60Hz
Flg3. Max Non-Repetitive Peak Fwd Surge Current
100
1
1
10
V
R
, Reverse Voltage (V)
Flg 4. Typical Junction Capacitance
100
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation
.
Tel:510-657-8671
.
Fax: 510-657-8921
.
www.comchiptech.com
Page2
Silicon Bridge Rectifiers
KBP200-G thru 2010-G (RoHS Device)
Rating and Characteristic Curves (KBPP200-G ~ KBP2010-G)
10,000
I
R
, Instantaneous Reverse Current (mA) (A)
1000
T
J
= 150ºC
100
T
J
= 125ºC
T
J
= 100ºC
10
1.0
T
J
= 25ºC
0.1
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Flg5. Typical Reverse Characteristics
“-G” suffix designated RoHS compliant version
Comhip Technology Corporation
.
Tel:510-657-8671
.
Fax: 510-657-8921
.
www.comchiptech.com
Page3
Embedded System
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