KBU606-G datasheet, PDF - EEWORLD Datasheet

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KBU606-G: Description6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size46KB，2 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

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KBU606-G Overview

6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

KBU606-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PSIP-W4
Reach Compliance Code	compli
ECCN code	EAR99
Other features	UL RECOGNIZED
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-W4
Maximum non-repetitive peak forward current	175 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
surface mount	NO
Terminal form	WIRE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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Silicon Bridge Rectifiers

KBU600-G thru 610-G (RoHS Device)

Reverse Voltage: 50 ~ 1000 Volts

Forward Current: 6.0 Amp

Features:

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

_ _

_ +

KBU

Max

Dim

Min

22.7 23.70

4.10

3.80

4.20

4.70

1.70

2.20

10.30 11.30

4.50

6.80

5.60

4.60

25.40

19.30

16.80 17.80

7.10

6.60

5.20

4.70

1.20

1.30

All Dimensions in mm

Mechanical Data:

Case: Molded Plastic

Terminals: Plated Leads Solderable per MIL

STD-202, Method 208

Weight: 1.7 grams (approx.)

Mounting Position: Any

Marking: Type Number

CHARACTERISTICS

Symbol

600-G 601-G 602-G 604-G 606-G 608-G 610-G

RRM

RWM

R(RMS)

FSM

θJC

STG

140

280

6.0

420

560

700

100

200

400

600

800

1000

KBU

UNIT

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectified Output Current @ T

= 100ºC

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half Sine-Wave Superimposed on rated load

(JEDEC Method)

Forward Voltage (per element) @ I

=3.0A

Peak Reverse Current

At Rated DC Blocking Voltage

=25ºC

=100ºC

250

1.0

166

4.2

-65 to +150

K/W

ºC

Rating for Fusing (t<8.3ms) (Note1)

Typical Thermal Resistance (Note2)

Operating and Storage Temperature Range

Note:

1. Non-repetitive for t>1ms and <8.3ms.

2. Thermal resistance junction to ambient mounted on PC board with 13.0x13.0x0.03mm thick land areas.

“-G” suffix designated RoHS compliant version

Comchip Technology Corporation

Tel:510-657-8671

Fax: 510-657-8921

www.comchiptech.com

Page1

KBU606-G Related Products

	KBU606-G	KBU600-G	KBU601-G	KBU602-G	KBU610-G	KBU608-G	KBU604-G
Description	6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE	6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compliant	compliant	compliant	compli	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
package instruction	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
Other features	UL RECOGNIZED	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Minimum breakdown voltage	600 V	-	100 V	200 V	1000 V	800 V	400 V
Configuration	BRIDGE, 4 ELEMENTS	-	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	-	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSIP-W4	-	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4	R-PSIP-W4
Maximum non-repetitive peak forward current	175 A	-	175 A	175 A	175 A	175 A	175 A
Number of components	4	-	4	4	4	4	4
Phase	1	-	1	1	1	1	1
Number of terminals	4	-	4	4	4	4	4
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	6 A	-	6 A	6 A	6 A	6 A	6 A
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V	-	100 V	200 V	1000 V	800 V	400 V
surface mount	NO	-	NO	NO	NO	NO	NO
Terminal form	WIRE	-	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1	-	-
Maker	-	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology

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