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SF20C02CF-G

Description
Glass Passivated Super Fast Recovery Rectifier
CategoryDiscrete semiconductor    diode   
File Size44KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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SF20C02CF-G Overview

Glass Passivated Super Fast Recovery Rectifier

SF20C02CF-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
Reach Compliance Codecompli
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
Maximum non-repetitive peak forward current200 A
Maximum operating temperature150 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.035 µs
surface mountNO
Glass Passivated Super Fast Recovery Rectifier
SF20C01CF-G THRU SF20C06CF-G
Voltage Range 50 to 600 V
Current 20.0 Ampere
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Mechanical Data
Case: Molded plastic ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 1.81 grams
ITO-220AB
.113(2.87)
.103(2.62)
.185(4.70)
.175(4.44)
.412(10.5)
MAX
DIA
.140(3.56)
.130(3.30)
1.25(3.18)
1.15(2.92)
.594(15.1)
.587(14.9)
PIN
1 2 3
.16(4.06)
.14(3.56)
.56(14.22)
.53(13.46)
.037(0.94)
.027(0.68)
1
3
case
2
.105(2.67)
.095(2.41)
.025(0.64)
.014(0.35)
.27(6.86)
.23(5.84)
.11(2.79)
.10(2.54)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SF
SF
SF
SF
SF
SF
SYMBOL 20C01CF 20C02CF 20C03CF 20C04CF 20C05CF 20C06CF UNIT
-G
-G
-G
-G
-G
-G
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 10.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
V
RRM
V
RMS
V
DC
IF
(AV)
50
35
50
100
70
100
200
140
200
20.0
300
210
300
400
280
400
600
420
600
V
V
V
A
I
FSM
200
175
A
V
F
0.975
10.0
250
35
120
-55 to +150
1.3
1.5
V
uA
uA
I
R
Trr
C
J
T
J
, T
STG
50
70
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
COMCHIP TECHNOLOGY 4115 CLIPPER CT. FREMONT CA 94538 TEL: (510) 657-8671 FAX: (510) 657-8921

SF20C02CF-G Related Products

SF20C02CF-G SF20C01CF-G SF20C03CF-G SF20C04CF-G SF20C06CF-G SF20C05CF-G
Description Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier Glass Passivated Super Fast Recovery Rectifier
Is it Rohs certified? conform to conform to conform to conform to conform to conform to
Maker Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Reach Compliance Code compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.975 V 0.975 V 0.975 V 1.3 V 1.5 V 1.3 V
Maximum non-repetitive peak forward current 200 A 200 A 200 A 175 A 175 A 175 A
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 20 A 20 A 20 A 20 A 20 A 20 A
Maximum repetitive peak reverse voltage 100 V 50 V 200 V 300 V 600 V 400 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO
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