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IDT54/74FCT162244T/AT/CT/ET
FAST CMOS 16-BIT BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
FAST CMOS 16-BIT
BUFFER/LINE DRIVER
IDT54/74FCT162244T/AT/CT/ET
FEATURES:
•
•
•
•
•
•
0.5 MICRON CMOS Technology
High-speed, low-power CMOS replacement for ABT functions
Typical t
SK(o)
(Output Skew) < 250ps
Low input and output leakage
≤
1µA (max.)
ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
Balanced Output Drivers:
– ±24mA (industrial)
– ±16mA (military)
Reduced system switching noise
Typical V
OLP
(Output Ground Bounce) < 0.6V at V
CC
= 5V,
T
A
= 25°C
Available in the following packages:
– Industrial: SSOP, TSSOP
– Military: CERPACK
DESCRIPTION:
The FCT162244T 16-Bit Buffer/Line Driver is for bus interface or signal
buffering applications requiring high speed and low power dissipation. These
devices have a flow through pin organization, and shrink packaging to simplify
board layout. All inputs are designed with hysteresis for improved noise margin.
The three-state controls allow independent 4-bit, 8-bit or combined 16-bit
operation. These parts are plug in replacements for 54/74ABT16244 where
higher speed, lower noise or lower power dissipation levels are desired.
The FCT162244T has balanced output current levels and current limiting
resistors. These offer low ground bounce, minimal undershoot, and controlled
output fall times, reducing the need for external series terminating resistors while
still providing very high speed operation for loads of less than 200pF.
•
•
•
FUNCTIONAL BLOCK DIAGRAM
1
OE
1
A
1
1
A
2
1
A
3
1
A
4
1
Y
1
1
Y
2
1
Y
3
1
Y
4
3
OE
3
A
1
3
A
2
3
A
3
3
A
4
3
Y
1
3
Y
2
3
Y
3
3
Y
4
2
OE
2
A
1
2
A
2
2
A
3
2
A
4
2
Y
1
2
Y
2
2
Y
3
2
Y
4
4
OE
4
A
1
4
A
2
4
A
3
4
A
4
4
Y
1
4
Y
2
4
Y
3
4
Y
4
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
1
© 2006 Integrated Device Technology, Inc.
OCTOBER 2008
DSC-5461/8
IDT54/74FCT162244T/AT/CT/ET
FAST CMOS 16-BIT BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATION
1
OE
1
Y
1
1
Y
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
(2)
Description
Terminal Voltage with Respect to GND
Terminal Voltage with Respect to GND
Storage Temperature
DC Output Current
Max
–0.5 to +7
–0.5 to V
CC
+0.5
–65 to +150
–60 to +120
Unit
V
V
°C
mA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
2
OE
1
A
1
1
A
2
V
TERM
(3)
T
STG
I
OUT
GND
1
Y
3
1
Y
4
GND
1
A
3
1
A
4
V
CC
2
Y
1
2
Y
2
V
CC
2
A
1
2
A
2
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. All device terminals except FCT162XXXT Output and I/O terminals.
3. Output and I/O terminals terminals for FCT162XXXT and FCT166XXXT.
CAPACITANCE
(T
A
= +25°C, F = 1.0MHz)
Symbol
C
IN
C
OUT
Parameter
(1)
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Typ.
3.5
3.5
Max.
6
8
Unit
pF
pF
GND
2
Y
3
2
Y
4
3
Y
1
3
Y
2
GND
2
A
3
2
A
4
3
A
1
3
A
2
NOTE:
1. This parameter is measured at characterization but not tested.
PIN DESCRIPTION
Pin Names
xOE
xAx
xYx
Data Inputs
3-State Outputs
Description
3-State Output Enable Inputs (Active LOW)
GND
3
Y
3
3
Y
4
GND
3
A
3
3
A
4
V
CC
4
Y
1
4
Y
2
V
CC
4
A
1
4
A
2
FUNCTION TABLE
(1)
Inputs
xOE
L
L
xAx
L
H
X
Outputs
xYx
L
H
Z
GND
4
Y
3
4
Y
4
4
OE
GND
4
A
3
4
A
4
3
OE
H
NOTE:
1. H = HIGH Voltage Level
X = Don’t Care
L = LOW Voltage Level
Z = High-Impedance
SSOP/ TSSOP/ CERPACK
TOP VIEW
2
IDT54/74FCT162244T/AT/CT/ET
FAST CMOS 16-BIT BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: T
A
= –40°C to +85°C, V
CC
= 5.0V ±10%; Military: T
A
= –55°C to +125°C, V
CC
= 5.0V ±10%
Symbol
V
IH
V
IL
I
IH
Parameter
Input HIGH Level
Input LOW Level
Input HIGH Current (Input pins)
(5)
Input HIGH Current (I/O pins)
(5)
I
IL
Input LOW Current (Input pins)
(5)
Input LOW Current (I/O pins)
(5)
I
OZH
I
OZL
V
IK
I
OS
V
H
I
CCL
I
CCH
I
CCZ
High Impedance Output Current
(3-State Output pins)
(5)
Clamp Diode Voltage
Short Circuit Current
Input Hysteresis
Quiescent Power Supply Current
V
CC
= Max.
V
IN
= GND or V
CC
V
CC
= Min., I
IN
= –18mA
V
CC
= Max., V
O
= GND
(3)
—
V
CC
= Max.
V
O
= 2.7V
V
O
= 0.5V
V
I
= GND
Test Conditions
(1)
Guaranteed Logic HIGH Level
Guaranteed Logic LOW Level
V
CC
= Max.
V
I
= V
CC
Min.
2
—
—
—
—
—
—
—
—
–80
—
—
Typ.
(2)
—
—
—
—
—
—
—
—
–0.7
–140
100
5
Max.
—
0.8
±1
±1
±1
±1
±1
±1
–1.2
–250
—
500
V
mA
mV
µA
µA
µA
Unit
V
V
µA
OUTPUT DRIVE CHARACTERISTICS
Symbol
I
ODL
I
ODH
V
OH
V
OL
Parameter
Output LOW Current
Output HIGH Current
Output HIGH Voltage
Output LOW Voltage
Test Conditions
(1)
V
CC
= 5V
,
V
IN =
V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= 5V
,
V
IN =
V
IH
or V
IL,
V
O
= 1.5V
(3)
V
CC
= Min
I
OH
= –16mA MIL
V
IN
= V
IH
or V
IL
I
OH
= –24mA COM'L
V
CC
= Min
I
OH
= 16mA MIL
V
IN
= V
IH
or V
IL
I
OH
= 24mA COM'L
Min.
60
–60
2.4
—
Typ.
(2)
115
–115
3.3
0.3
Max.
200
–200
—
0.55
Unit
mA
mA
V
V
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
4. Duration of the condition can not exceed one second.
5. This test limit for this parameter is ±5µA at T
A
= –55°C.
3
IDT54/74FCT162244T/AT/CT/ET
FAST CMOS 16-BIT BUFFER/LINE DRIVER
MILITARY AND INDUSTRIAL TEMPERATURE RANGES
POWER SUPPLY CHARACTERISTICS
Symbol
ΔI
CC
I
CCD
Parameter
Quiescent Power Supply Current
TTL Inputs HIGH
Dynamic Power Supply
Current
(4)
V
CC
= Max.
V
IN
= 3.4V
(3)
V
CC
= Max.
Outputs Open
xOE = GND
One Input Toggling
50% Duty Cycle
V
CC
= Max.
Outputs Open
fi = 10MHz
50% Duty Cycle
xOE = GND
One Bit Toggling
V
CC
= Max.
Outputs Open
fi = 2.5MHz
50% Duty Cycle
xOE = GND
Sixteen Bits Toggling
V
IN
= V
CC
V
IN
= GND
Test Conditions
(1)
Min.
—
—
Typ.
(2)
0.5
60
Max.
1.5
100
Unit
mA
µA/
MHz
I
C
Total Power Supply Current
(6)
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
V
IN
= V
CC
V
IN
= GND
V
IN
= 3.4V
V
IN
= GND
—
0.6
1.5
mA
—
0.9
2.3
—
2.4
4.5
(5)
—
6.4
16.5
(5)
NOTES:
1. For conditions shown as Min. or Max., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 5.0V, +25°C ambient.
3. Per TTL driven input (V
IN
= 3.4V). All other inputs at V
CC
or GND.
4. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
5. Values for these conditions are examples of the I
CC
formula. These limits are guaranteed but not tested.
6. I
C
= I
QUIESCENT
+ I
INPUTS
+ I
DYNAMIC
I
C
= I
CC
+
ΔI
CC
D
H
N
T
+ I
CCD
(f
CP
N
CP
/2 + fiNi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
ΔI
CC
= Power Supply Current for a TTL High Input (V
IN
= 3.4V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at D
H
I
CCD
= Dynamic Current caused by an Input Transition Pair (HLH or LHL)
f
CP
= Clock Frequency for Register Devices (Zero for Non-Register Devices)
N
CP
= Number of Clock Inputs at f
CP
fi = Input Frequency
Ni = Number of Inputs at fi
4
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