Philips Semiconductors
Product specification
General purpose diode
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage: max. 200 V
•
Repetitive peak reverse voltage: max. 250 V
•
Repetitive peak forward current: max. 625 mA.
handbook, halfpage
BAS321
PINNING
PIN
1
2
DESCRIPTION
cathode
anode
1
2
APPLICATIONS
•
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
ORDERING INFORMATION
TYPE
NUMBER
BAS321
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
Marking code:
A7
The marking bar indicates the cathode.
MAM406
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
see Fig.2; note 1
t
p
< 0.5 ms;
δ ≤
0.25
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
9
3
1.7
300
+150
150
A
A
A
mW
°C
°C
CONDITIONS
−
−
−
−
MIN.
MAX.
250
200
250
625
V
V
mA
mA
UNIT
2004 Jan 26
2
Philips Semiconductors
Product specification
General purpose diode
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
see Fig.5
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA; see Fig.8
100
100
2
50
1
1.25
CONDITIONS
BAS321
MAX.
V
V
UNIT
nA
µA
pF
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-s)
R
th(j-a)
Notes
1. Soldering point of cathode tab.
2. Device mounted on an FR4 printed circuit board.
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
note 2
CONDITIONS
T
s
= 90°C; note 1
VALUE
130
366
UNIT
K/W
K/W
2004 Jan 26
3
Philips Semiconductors
Product specification
General purpose diode
GRAPHICAL DATA
MBK927
BAS321
handbook, halfpage
300
handbook, halfpage
600
IF
MBG384
IF
(mA)
200
(mA)
(1)
(2)
(3)
400
100
200
0
0
50
100
150
200
Tamb (°C)
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous
forward current as a function of
ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG703
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2004 Jan 26
4
Philips Semiconductors
Product specification
General purpose diode
BAS321
10
2
handbook, halfpage
IR
(µA)
10
MBG381
handbook, halfpage
1.0
MBG447
Cd
(pF)
0.8
1
(1)
(2)
0.6
10
1
0.4
10
2
0
100
Tj (
o
C)
200
0.2
0
2
4
6
VR (V)
8
(1) V
R
= V
Rmax
; maximum values.
(2) V
R
= V
Rmax
; typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of junction
temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
300
MBK926
VR
(V)
200
100
0
0
50
100
150
200
Tamb (°C)
Fig.7
Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
2004 Jan 26
5
RF/Wirelessly
京公网安备 11010802033920号
EEWORLD
