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BAT54J

Description
0.2 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BAT54J Overview

0.2 A, SILICON, SIGNAL DIODE

BAT54J Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-90
package instructionR-PDSO-F2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JESD-30 codeR-PDSO-F2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current0.6 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature30
BAT54J
Schottky barrier single diode
Rev. 01 — 8 March 2007
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier single diode with an integrated guard ring for stress protection,
encapsulated in a SOD323F (SC-90) very small and flat lead Surface-Mounted Device
(SMD) plastic package.
1.2 Features
I
I
I
I
Low forward voltage
Very small and flat lead SMD plastic package
Low capacitance
Flat leads: excellent coplanarity and improved thermal behavior
1.3 Applications
I
Voltage clamping
I
Line termination
I
Reverse polarity protection
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 mA
[1]
Conditions
Min
-
-
-
Typ
-
-
-
Max
200
30
320
Unit
mA
V
mV
Pulse test: t
p
300
µs; δ ≤
0.02.
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