Philips Semiconductors
Product specification
Schottky barrier double diode
FEATURES
•
Low forward voltage
•
Guard ring protected
•
Small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits
•
Blocking diodes.
DESCRIPTION
Planar Schottky barrier double diode. Two separate dies
encapsulated in a SOT143B small plastic SMD package.
Top view
BAT74
PINNING
PIN
1
2
3
4
DESCRIPTION
cathode (k
1
)
cathode (k
2
)
anode (a
2
)
anode (a
1
)
handbook, halfpage
4
3
4
3
1
1
2
MAM194
2
MARKING
TYPE NUMBER
BAT74
MARKING CODE
L41
Fig.1
Simplified outline (SOT143B), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
amb
V
R
I
F
I
FRM
Note
1. If both diodes are in forward operation at the same moment, total device current is max. 110 mA. If one diode is in
reverse operation and the other is in forward operation at the same moment, total device current is max. 200 mA.
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
<
10 ms
T
amb
≤
25
°C;
see Fig.2
−
−65
−
−65
−
series connection
continuous forward current
repetitive peak forward current
t
p
≤
1 s;
δ ≤
0.5
−
−
−
−
−
−
30
200
300
600
230
+150
125
+125
V
mA
mA
mA
mW
°C
°C
°C
V
V
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Double diode operation
continuous reverse voltage
30
60
110
(1)
200
2001 Sep 05
2
Philips Semiconductors
Product specification
Schottky barrier double diode
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT143B standard mounting conditions.
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA; note 1
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; note 2; see Fig.4
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.6
f = 1 MHz; V
R
= 1 V; see Fig.5
240
320
400
500
800
2
5
PARAMETER
CONDITIONS
MAX.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
BAT74
UNIT
K/W
UNIT
mV
mV
mV
mV
mV
µA
ns
C
d
Notes
diode capacitance
10
pF
1. Temperature coefficient of forward voltage
−0.6%/K.
2. Pulsed test: t
p
= 300µs;
δ
= 0.02.
2001 Sep 05
3
Philips Semiconductors
Product specification
Schottky barrier double diode
BAT74
300
P tot
(mW)
200
MSA894
MSA892
10
3
handbook, halfpage
IF
(mA)
10
2
(1) (2) (3)
10
100
1
(1)
(2)
(3)
0
0
75
Tamb (
o
C)
150
10
1
0
0.4
0.8
VF (V)
1.2
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.3
Fig.2 Power derating curve.
Forward current as a function of forward
voltage; typical values.
10
3
I
R
(µA)
10
2
(2)
(1)
MSA893
handbook, halfpage
15
MSA891
Cd
(pF)
10
10
5
1
(3)
10
1
0
10
20
VR (V)
30
0
0
10
20
VR (V)
30
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
f = 1 MHz; T
amb
= 25
°C.
Fig.4
Reverse current as a function of reverse
voltage; typical values.
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
2001 Sep 05
4
Analog electronics
京公网安备 11010802033920号
EEWORLD
