DC COMPONENTS CO., LTD.
R
DC9014
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
TO-92
.190(4.83)
.170(4.33)
.190(4.83)
.170(4.33)
2 Typ
2 Typ
o
o
Pinning
1 = Emitter
2 = Base
3 = Collector
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
50
45
5
100
450
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.500
Min
(12.70)
.022(0.56)
.014(0.36)
.100
Typ
(2.54)
.148(3.76)
.132(3.36)
.022(0.56)
.014(0.36)
.050
Typ
(1.27)
3 2 1
C
.050
o
o
5
Typ.
5
Typ.
(1.27) Typ
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
(1)
Min
50
45
5
-
-
-
-
0.58
60
150
-
2%
Typ
-
-
-
-
-
0.14
0.84
0.63
280
270
2.2
Max
-
-
-
50
50
0.3
1
0.7
1000
-
3.5
Unit
V
V
V
nA
nA
V
V
V
-
MHz
pF
Test Conditions
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=5mA
I
C
=100mA, I
B
=5mA
I
C
=2mA, V
CE
=5V
I
C
=1mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
V
CB
=10V, f=1MHz, I
E
=0
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
ob
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
380µs, Duty Cycle
Classification of h
FE
Rank
Range
A
60~150
B
100~300
C
200~600
D
400~1000
MCU
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