DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
DCR106-3
THRU
DCR106-8
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 100 to 600 Volts
CURRENT - 4.0 Amperes
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-126
.304(7.72)
.285(7.52)
.105(2.66)
.095(2.41)
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
.041(1.05)
.037(0.95)
o
.154(3.91)
.150(3.81)
.055(1.39)
.045(1.14)
.152(3.86)
.138(3.50)
Absolute Maximum Ratings
(T
A
=25
Characteristic
Peak Repetitive Off-State
Voltage and Reverse Voltage
DCR106-3
DCR106-4
DCR106-6
DCR106-8
C)
Rating
100
200
400
600
4.0
25
1.0
0.5
0.1
-40 to +110
-40 to +150
Unit
V
Symbol
V
DRM
,
V
RRM
I
T(RMS)
I
TSM
I
GM
P
GM
P
G(AV)
T
J
T
STG
.279(7.09)
.275(6.99)
1
2 3
3 Typ
.052(1.32)
.048(1.22)
3 Typ
o
o
On-State RMS Current
(T
A
=57
o
C, 180
o
Conduction Angles)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60Hz)
Forward Peak Gate Current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Operating Junction Temperature
Storage Temperature
.620(15.75)
.600(15.25)
A
A
A
W
W
o
o
.032(0.81)
.028(0.71)
.189(4.80)
.171(4.34)
.022
Typ
(0.55)
3 Typ
o
3 Typ
o
C
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Peak Repetitive Forward or Reverse
Off-State Blocking Current
Peak Forward On-State Voltage
Continuous DC Gate Trigger Current
Continuous DC Gate Trigger Voltage
DC Holding Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
T
J
=25 C
T
J
=110 C
o
o
Min
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
8.0
2.2
3.0
Max
10
200
2.0
200
0.8
5.0
-
-
-
Unit
µA
V
µA
V
mA
V/µS
µsec
o
Test Conditions
V
AK
=Rated V
DRM
or V
RRM
R
GK
=1KΩ
I
TM
=4A Peak
V
AK
=7V DC, R
L
=100Ω
V
AK
=7V DC, R
L
=100Ω
R
GK
=1KΩ
R
GK
=1KΩ
I
GT
=10mA
-
I
DRM
, I
RRM
V
TM
I
GT
V
GT
I
H
dv/dt
T
gt
R
θJC
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(t
D
+t
R
)
Thermal Resistance, Junction to Case
C/W
Embedded System
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