DC COMPONENTS CO., LTD.
R
DMBTA13
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR
Description
Designed for applications requiring high current gain.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
1
3
.020(0.50)
.012(0.30)
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
2
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
P
D
T
J
T
STG
Rating
30
30
10
300
225
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.0043(0.11)
.0035(0.09)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CES
BV
EBO
I
CBO
I
EBO
(1)
Min
30
30
10
-
-
-
-
5K
10K
125
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
100
100
1.5
2
-
-
-
6
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
I
C
=100µA
I
C
=100µA
I
E
=10µA
V
CB
=30V
V
EB
=10V
I
C
=100mA, I
B
=0.1mA
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V
I
C
=100mA, V
CE
=5V
I
C
=10mA, V
CE
=5V, f=100MHz
V
CB
=10V, f=1MHz
V
CE(sat)
V
BE(on)
h
FE1
h
FE2
f
T
C
ob
380µs, Duty Cycle
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