DC COMPONENTS CO., LTD.
R
DMBTA44
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for applications requiring high breakdown
voltage.
SOT-23
.020(0.50)
.012(0.30)
Pinning
1 = Base
2 = Emitter
3 = Collector
1
3
.063(1.60)
.055(1.40)
.108(0.65)
.089(0.25)
2
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
450
400
6
300
350
+150
-55 to +150
Unit
V
V
V
mA
mW
o
o
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.051(1.30)
.035(0.90)
.026(0.65)
.010(0.25)
.0043(0.11)
.0035(0.09)
.045(1.15)
.034(0.85)
C
.004
Max
(0.10)
.027(0.67)
.013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics
o
Characteristic
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
(1)
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CES
I
EBO
V
CE(sat)1
(1)
Min
450
400
6
-
-
-
-
-
-
-
40
50
45
40
-
2%
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
Max
-
-
-
100
500
100
0.4
0.5
0.75
0.75
-
300
-
-
6
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
pF
Test Conditions
I
C
=100µA
I
C
=1mA
I
E
=10µA
V
CB
=400V
V
CE
=400V
V
EB
=4V
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V
V
CB
=20V, f=1MHz
V
CE(sat)2
V
CE(sat)3
V
BE(sat)
h
FE1
h
FE2
h
FE3
h
FE4
DC Current Gain
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
C
ob
380µs, Duty Cycle
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