DC COMPONENTS CO., LTD.
R
DXT5401
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose applications requiring
high breakdown voltages.
SOT-89
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-160
-150
-5
-500
1
+150
-55 to +150
Unit
V
V
V
mA
W
o
o
.167(4.25)
.159(4.05)
1
2
3
.102(2.60)
.095(2.40)
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
f
T
C
ob
380µs, Duty Cycle 2%
Min
-160
-150
-5
-
-
-
-
-
-
50
60
50
100
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
-50
-50
-0.2
-0.5
-1
-1
-
240
-
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
MHz
pF
Test Conditions
I
C
=-100µA
I
C
=-1mA
I
E
=-10µA
V
CB
=-120V
V
EB
=-5V
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-1mA, V
CE
=-5V
I
C
=-10mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-5V
V
CE
=-10V, f=100MHz, I
C
=-10mA
V
CB
=-10V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
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