DC COMPONENTS CO., LTD.
R
DXTD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AF output amplifier and flash unit.
SOT-89
Pinning
1 = Base
2 = Collector
3 = Emitter
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (continuous)
Collector Current (peak PT=10mS)
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
D
T
J
T
STG
Rating
40
20
7
5
8
1.2
+150
-55 to +150
Unit
V
V
V
A
A
W
o
o
.167(4.25)
.159(4.05)
1
2
3
.102(2.60)
.095(2.40)
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE1
h
FE2
f
T
C
ob
380µs, Duty Cycle 2%
Min
40
20
7
-
-
-
340
150
-
-
Typ
-
-
-
-
-
0.35
-
-
150
-
Max
-
-
-
0.1
0.1
1
800
-
-
50
Unit
V
V
V
µA
µA
V
-
-
MHz
pF
I
C
=1mA
Test Conditions
I
C
=100µA
I
E
=10µA
V
CB
=10V
V
EB
=7V
I
C
=3A, I
B
=0.1A
I
C
=0.5A, V
CE
=2V
I
C
=2A, V
CE
=2V
I
E
=50mA, V
CE
=6V
V
CB
=20V, f=1MHz
Collector-Base Breakdown Volatge
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Volatge
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
DC Current Gain
(1)
Transition Frequency
Output Capacitance
(1)Pulse Test: Pulse Width
Classification of h
FE1
Rank
Range
R
340~600
S
560~800
Embedded System
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