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M13

Description
0.175 A, 2000 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size177KB,2 Pages
ManufacturerDCCOM [ DC COMPONENTS ]
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M13 Overview

0.175 A, 2000 V, SILICON, SIGNAL DIODE

DC COMPONENTS CO., LTD.
R
RECTIFIER SPECIALISTS
M13
THRU
M20
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SILICON RECTIFIER
VOLTAGE RANGE 1300 to 2000 Volts
CURRENT 1.0 Ampere
FEATURES
* ldeal for surface mounted applications
* Low leakage current
SMA(DO-214AC)
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
*Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
* Polarity: As marked
* Mounting position: Any
* Weight: 0.064 gram
.062(1.60)
.055(1.40)
.181(4.60)
.157(4.00)
.114(2.90)
.098(2.50)
.096(2.44)
.078(2.00)
.060(1.52)
.030(0.76)
.208(5.28)
.188(4.80)
.012(0.305)
.006(0.152)
.008(0.203)
.002(0.051)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 75
o
C
Peak Forward Surge Current I
FM
(surge): 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 3)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
@T
A
= 25
o
C
@T
A
= 125
o
C
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
trr
RθJL
C
J
T
J
, T
STG
M13
1300
910
1300
M16
1600
1120
1600
1.0
30
1.1
5.0
50
2.5
30
15
-65 to + 175
M20
2000
1400
2000
UNITS
Volts
Volts
Volts
Amps
Amps
Volts
uAmps
uSec
0
C/ W
pF
0
C
NOTES : 1. Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
2. Thermal Resistance (Junction to Ambient), .24in
2
(6.0mm
2
) copper pads to each terminal.
3. Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.

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Description 0.175 A, 2000 V, SILICON, SIGNAL DIODE 0.175 A, 2000 V, SILICON, SIGNAL DIODE 0.175 A, 2000 V, SILICON, SIGNAL DIODE

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