DC COMPONENTS CO., LTD.
R
MID117
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR
Description
Designed for general purpose power and switching
such as output or driver stages in applications such
as switching regulators, converters, and amplifiers.
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
2
.284(7.20)
.268(6.80)
Pinning
1 = Base
2 = Collector
3 = Emitter
.022(0.55)
.018(0.45)
.063(1.60)
.055(1.40)
Absolute Maximum Ratings
(T
A
=25
o
C)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(T
C
=25 C)
Junction Temperature
Storage Temperature
o
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Rating
-100
-100
-5
-2
25
+150
-55 to +150
Unit
V
V
V
A
W
o
o
.032
Max
(0.80)
.035 Max
(0.90)
1
2
3
.059(1.50)
.035(0.90)
.256
Min
(6.50)
.024(0.60)
.018(0.45)
.181 Typ
(4.60)
.095(2.40)
.087(2.20)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol
BV
CBO
BV
CEO
I
CBO
I
CEO
I
EBO
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
V
BE(on)
h
FE1
h
FE2
h
FE3
C
ob
380µs, Duty Cycle
2%
Min
-100
-100
-
-
-
-
-
-
-
500
1K
200
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-10
-20
-2
-2
-3
-4
-2.8
-
12K
-
200
Unit
V
V
µA
µA
mA
V
V
V
V
-
-
-
pF
Test Conditions
I
C
=-1mA
I
C
=-30mA
V
CB
=-80V
V
CE
=-50V
V
BE
=-5V
I
C
=-2A, I
B
=-8mA
I
C
=-4A, I
B
=-80mA
I
C
=-4A, I
B
=-40mA
I
C
=-2A, V
CE
=-4V
I
C
=-0.5A, V
CE
=-3V
I
C
=-2A, V
CE
=-3V
I
C
=-4A, V
CE
=-3V
V
CB
=-10V, f=0.1MHz
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
(1)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
(1)
(1)
(1)
Output Capacitance
(1)Pulse Test: Pulse Width
Microcontroller MCU
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