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5962R9676602VYX

Description
256X8 MULTI-PORT SRAM, CDFP42, FP-42
Categorystorage    storage   
File Size111KB,11 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

5962R9676602VYX Overview

256X8 MULTI-PORT SRAM, CDFP42, FP-42

5962R9676602VYX Parametric

Parameter NameAttribute value
MakerRenesas Electronics Corporation
Parts packaging codeDFP
package instructionDFP,
Contacts42
Reach Compliance Codeunknown
ECCN code3A001.A.2.C
Maximum access time500 ns
JESD-30 codeR-XDFP-F42
JESD-609 codee4
length26.925 mm
memory density2048 bit
Memory IC TypeMULTI-PORT SRAM
memory width8
Number of functions1
Number of terminals42
word count256 words
character code256
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize256X8
Package body materialUNSPECIFIED
encapsulated codeDFP
Package shapeRECTANGULAR
Package formFLATPACK
Parallel/SerialPARALLEL
Certification statusNot Qualified
Filter levelMIL-PRF-38535 Class V
Maximum seat height2.54 mm
Maximum supply voltage (Vsup)5.25 V
Minimum supply voltage (Vsup)4.75 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceGOLD
Terminal formFLAT
Terminal pitch1.27 mm
Terminal locationDUAL
total dose100k Rad(Si) V
width16.255 mm
Base Number Matches1
HS-81C55RH, HS-81C56RH
TM
Data Sheet
August 2000
File Number
3039.2
Radiation Hardened 256 x 8 CMOS RAM
The HS-81C55/56RH are radiation hardened RAM and I/O
chips fabricated using the Intersil radiation hardened Self-
Aligned Junction Isolated (SAJI) silicon gate technology.
Latch-up free operation is achieved by the use of epitaxial
starting material to eliminate the parasitic SCR effect seen in
conventional bulk CMOS devices.
The HS-81C55/56RH is intended for use with the
HS-80C85RH radiation hardened microprocessor system.
The RAM portion is designed as 2048 static cells organized
as 256 x 8. A maximum post irradiation access time of
500ns allows the HS-81C55/56RH to be used with the
HS-80C85RH CPU without any wait states. The
HS-81C55RH requires an active low chip enable while the
HS-81C56RH requires an active high chip enable. These
chips are designed for operation utilizing a single 5V power
supply.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96766. A “hot-link” is provided
on our homepage for downloading.
http://www.intersil.com/spacedefense/space.asp
Features
• Electrically Screened to SMD # 5962-96766
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Hardened EPI-CMOS
- Total Dose. . . . . . . . . . . . . . . . . . . . . 100 krad(Si) (Max)
- Transient Upset . . . . . . . . . . . . . . . . . .>1 x 10
8
rad(Si)/s
- Latch-Up Free . . . . . . . . . . . . . . . . . . >1 x 10
12
rad(Si)/s
• Electrically Equivalent to Sandia SA 3001
• Pin Compatible with Intel 8155/56
• Bus Compatible with HS-80C85RH
• Single 5V Power Supply
• Low Standby Current . . . . . . . . . . . . . . . . . . . .200µA Max
• Low Operating Current . . . . . . . . . . . . . . . . . . . . 2mA/MHz
• Completely Static Design
• Internal Address Latches
• Two Programmable 8-Bit I/O Ports
• One Programmable 6-Bit I/O Port
• Programmable 14-Bit Binary Counter/Timer
• Multiplexed Address and Data Bus
• Self Aligned Junction Isolated (SAJI) Process
• Military Temperature Range . . . . . . . . . . . -55
o
C to 125
o
C
Ordering Information
ORDERING NUMBER
5962R9676601QXC
5962R9676601QYC
5962R9676601VXC
5962R9676601VYC
5962R9676602QXC
5962R9676602QYC
5962R9676602VXC
5962R9676602VYC
INTERNAL
MKT. NUMBER
HS1-81C55RH-8
HS9-81C55RH-8
HS1-81C55RH-Q
HS9-81C55RH-Q
HS1-81C56RH-8
HS9-81C56RH-8
HS1-81C56RH-Q
HS9-81C56RH-Q
TEMP. RANGE
(
o
C)
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
-55 to 125
Functional Diagram
IO/M
AD0 - AD7
CE OR CE
ALE
RD
WR
RESET
TIMER CLK
TIMER OUT
TIMER
C
PORT C
8
PC0 - PC5
VDD (10V)
GND
256 x 8
STATIC
RAM
A
PORT A
8
PA0 - PA7
PORT B
B
8
PB0 - PB7
81C55RH = CE
81C56RH = CE
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright © Intersil Corporation 2000

5962R9676602VYX Related Products

5962R9676602VYX 5962R9676602VXX 5962R9676601QXX 5962R9676601VXX 5962R9676602QYX 5962R9676602QXX 5962R9676601QYX 5962R9676601VYX 5962-01-363-9538
Description 256X8 MULTI-PORT SRAM, CDFP42, FP-42 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 256X8 MULTI-PORT SRAM, CDFP42, FP-42 256X8 MULTI-PORT SRAM, CDIP40, CERAMIC, DIP-40 256X8 MULTI-PORT SRAM, CDFP42, FP-42 256X8 MULTI-PORT SRAM, CDFP42, FP-42 5962-01-363-9538
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown not_compliant
JESD-30 code R-XDFP-F42 R-CDIP-T40 R-CDIP-T40 R-CDIP-T40 R-XDFP-F42 R-CDIP-T40 R-XDFP-F42 R-XDFP-F42 R-XDIP-T40
Number of terminals 42 40 40 40 42 40 42 42 40
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material UNSPECIFIED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED CERAMIC, METAL-SEALED COFIRED UNSPECIFIED UNSPECIFIED CERAMIC
encapsulated code DFP DIP DIP DIP DFP DIP DFP DFP DIP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK IN-LINE IN-LINE IN-LINE FLATPACK IN-LINE FLATPACK FLATPACK IN-LINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level MIL-PRF-38535 Class V MIL-PRF-38535 Class V MIL-PRF-38535 Class Q MIL-PRF-38535 Class V MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class Q MIL-PRF-38535 Class V 38535Q/M;38534H;883B
surface mount YES NO NO NO YES NO YES YES NO
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal form FLAT THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE FLAT THROUGH-HOLE FLAT FLAT THROUGH-HOLE
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Parts packaging code DFP DIP DIP DIP DFP DIP DFP DFP -
package instruction DFP, DIP, DIP, DIP, DFP, DIP, DFP, DFP, -
Contacts 42 40 40 40 42 40 42 42 -
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C -
Maximum access time 500 ns 500 ns 500 ns 500 ns 500 ns 500 ns 500 ns 500 ns -
JESD-609 code e4 e4 e4 e4 e4 e4 e4 e4 -
memory density 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit 2048 bit -
Memory IC Type MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM MULTI-PORT SRAM -
memory width 8 8 8 8 8 8 8 8 -
Number of functions 1 1 1 1 1 1 1 1 -
word count 256 words 256 words 256 words 256 words 256 words 256 words 256 words 256 words -
character code 256 256 256 256 256 256 256 256 -
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS -
organize 256X8 256X8 256X8 256X8 256X8 256X8 256X8 256X8 -
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL -
Maximum supply voltage (Vsup) 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V 5.25 V -
Minimum supply voltage (Vsup) 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V 4.75 V -
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V -
Terminal surface GOLD GOLD GOLD GOLD GOLD GOLD GOLD GOLD -
Terminal pitch 1.27 mm - - - 1.27 mm - 1.27 mm 1.27 mm 2.54 mm
total dose 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V 100k Rad(Si) V -
Base Number Matches 1 1 1 1 1 1 1 - -

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