Standard SRAM, 256KX1, 45ns, CMOS, CQCC28, CERAMIC, LCC-28
| Parameter Name | Attribute value |
| Maker | EDI [Electronic devices inc.] |
| package instruction | CERAMIC, LCC-28 |
| Reach Compliance Code | unknown |
| Maximum access time | 45 ns |
| JESD-30 code | R-CQCC-N28 |
| JESD-609 code | e0 |
| length | 13.97 mm |
| memory density | 262144 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 1 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 28 |
| word count | 262144 words |
| character code | 256000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256KX1 |
| Output characteristics | 3-STATE |
| Exportable | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Parallel/Serial | PARALLEL |
| Certification status | Not Qualified |
| Maximum seat height | 3.048 mm |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | TIN LEAD |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| width | 8.89 mm |
| Base Number Matches | 1 |
| 5962-8872502XA | 5962-8854402YA | 5962-8854402XA | 5962-8872502LA | 5962-8872503XA | 5962-8854403YA | 5962-8872503LA | 5962-8854402LA | 5962-8854403XA | 5962-8854403LA | |
|---|---|---|---|---|---|---|---|---|---|---|
| Description | Standard SRAM, 256KX1, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 256KX1, 45ns, CMOS, CDFP28, CERAMIC, DFP-28 | Standard SRAM, 256KX1, 45ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 256KX1, 55ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 256KX1, 55ns, CMOS, CDFP28, CERAMIC, DFP-28 | Standard SRAM, 256KX1, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 256KX1, 45ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 256KX1, 55ns, CMOS, CQCC28, CERAMIC, LCC-28 | Standard SRAM, 256KX1, 55ns, CMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 |
| package instruction | CERAMIC, LCC-28 | CERAMIC, DFP-28 | CERAMIC, LCC-28 | 0.300 INCH, CERAMIC, DIP-24 | CERAMIC, LCC-28 | CERAMIC, DFP-28 | 0.300 INCH, CERAMIC, DIP-24 | 0.300 INCH, CERAMIC, DIP-24 | CERAMIC, LCC-28 | 0.300 INCH, CERAMIC, DIP-24 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknow |
| Maximum access time | 45 ns | 45 ns | 45 ns | 45 ns | 55 ns | 55 ns | 55 ns | 45 ns | 55 ns | 55 ns |
| JESD-30 code | R-CQCC-N28 | R-CDFP-F28 | R-CQCC-N28 | R-CDIP-T24 | R-CQCC-N28 | R-CDFP-F28 | R-CDIP-T24 | R-CDIP-T24 | R-CQCC-N28 | R-CDIP-T24 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bi |
| Memory IC Type | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| memory width | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 24 | 28 | 28 | 24 | 24 | 28 | 24 |
| word count | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words | 262144 words |
| character code | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 | 256000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 | 256KX1 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | NO | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| Package body material | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN | DFP | QCCN | DIP | QCCN | DFP | DIP | DIP | QCCN | DIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | CHIP CARRIER | FLATPACK | CHIP CARRIER | IN-LINE | CHIP CARRIER | FLATPACK | IN-LINE | IN-LINE | CHIP CARRIER | IN-LINE |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 3.048 mm | 3.302 mm | 3.048 mm | 5.08 mm | 3.048 mm | 3.302 mm | 5.08 mm | 5.08 mm | 3.048 mm | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | YES | YES | YES | NO | YES | YES | NO | NO | YES | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | NO LEAD | FLAT | NO LEAD | THROUGH-HOLE | NO LEAD | FLAT | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm |
| Terminal location | QUAD | DUAL | QUAD | DUAL | QUAD | DUAL | DUAL | DUAL | QUAD | DUAL |
| width | 8.89 mm | 10.16 mm | 8.89 mm | 7.62 mm | 8.89 mm | 10.16 mm | 7.62 mm | 7.62 mm | 8.89 mm | 7.62 mm |
| Maker | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | - | - | - | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] | EDI [Electronic devices inc.] |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | - |