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8413202YA

Description
LCC-20, Tube
Categorystorage    storage   
File Size270KB,10 Pages
ManufacturerIDT (Integrated Device Technology)
Download Datasheet Parametric View All

8413202YA Overview

LCC-20, Tube

8413202YA Parametric

Parameter NameAttribute value
Brand NameIntegrated Device Technology
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIDT (Integrated Device Technology)
Parts packaging codeLCC
package instructionQCCN,
Contacts20
Manufacturer packaging codeLZ20
Reach Compliance Codenot_compliant
ECCN code3A001.A.2.C
Maximum access time45 ns
JESD-30 codeR-CQCC-N20
JESD-609 codee0
length10.8585 mm
memory density16384 bit
Memory IC TypeSTANDARD SRAM
memory width1
Humidity sensitivity level1
Number of functions1
Number of ports1
Number of terminals20
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX1
ExportableNO
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum seat height1.905 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.366 mm
Base Number Matches1
CMOS Static RAM
16K (16K x 1-Bit)
Features
IDT6167SA
IDT6167LA
OBSOLETE PART
High-speed (equal access and cycle time)
– Military: 25/35/45/55/70/85/100ns (max.)
– Commercial: 15/20/25ns (max.)
Low power consumption
Battery backup operation — 2V data retention voltage
(IDT6167LA only)
Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle
soft-error rates
Separate data input and output
Military product compliant to MIL-STD-883, Class B
Description
The lDT6167 is a 16,384-bit high-speed static RAM organized
as 16K x 1. The part is fabricated using IDT’s high-performance,
Functional Block Diagram
A
0
A
13
R
T O
R F
A D
P E
E D
T N
S
E E
L M IGN
O M S
S
B O DE
O EC
R EW
T N
O
N
V
CC
GND
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
I/O CONTROL
CONTROL
LOGIC
high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers
a reduced power standby mode. When
CS
goes HIGH, the circuit
will automatically go to, and remain in, a standby mode as long as
CS
remains HIGH. This capability provides significant system-level power
and cooling savings. The low-power (LA) version also offers a battery
backup data retention capability where the circuit typically consumes
only 1µW operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compatible and
operate from a single 5V supply, thus simplifying system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic
DIP or CERDIP and a Plastic 20-pin providing high board-level packing
densities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performance and reliability.
D
IN
D
OUT
,
CS
WE
2981 drw 01
FEBRUARY 2001
1
©2000 Integrated Device Technology, Inc.
DSC-2981/08
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