30 AMP 100 Volts 0.055OHM N-Channel POWER MOSFET
| Parameter Name | Attribute value |
| Maker | SSDI |
| package instruction | CHIP CARRIER, R-CBCC-N3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (Abs) (ID) | 30 A |
| Maximum drain current (ID) | 30 A |
| Maximum drain-source on-resistance | 0.055 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-CBCC-N3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 125 W |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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