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SFF440

Description
8 AMP 500 Volts 0.85 OHM N-Channel POWER MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size162KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
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SFF440 Overview

8 AMP 500 Volts 0.85 OHM N-Channel POWER MOSFET

SFF440 Parametric

Parameter NameAttribute value
MakerSSDI
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)3.6 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)8 A
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.98 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
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