10 AMP 1000 Volts 1.2 ohm N-Channel Power MOSFET
| Parameter Name | Attribute value |
| Maker | SSDI |
| package instruction | FLANGE MOUNT, R-XSFM-P3 |
| Reach Compliance Code | compli |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (ID) | 10 A |
| Maximum drain-source on-resistance | 1.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-259 |
| JESD-30 code | R-XSFM-P3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | PIN/PEG |
| Terminal location | SINGLE |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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